JPS57106180A - Manufacture of mercury cadmium telluride diode - Google Patents

Manufacture of mercury cadmium telluride diode

Info

Publication number
JPS57106180A
JPS57106180A JP55183442A JP18344280A JPS57106180A JP S57106180 A JPS57106180 A JP S57106180A JP 55183442 A JP55183442 A JP 55183442A JP 18344280 A JP18344280 A JP 18344280A JP S57106180 A JPS57106180 A JP S57106180A
Authority
JP
Japan
Prior art keywords
diode
wavelength
crystal
cadmium telluride
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55183442A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6259473B2 (enrdf_load_stackoverflow
Inventor
Yasuo Baba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55183442A priority Critical patent/JPS57106180A/ja
Publication of JPS57106180A publication Critical patent/JPS57106180A/ja
Publication of JPS6259473B2 publication Critical patent/JPS6259473B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H10F30/2212—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group II-VI materials, e.g. HgCdTe infrared photodiodes

Landscapes

  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP55183442A 1980-12-24 1980-12-24 Manufacture of mercury cadmium telluride diode Granted JPS57106180A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55183442A JPS57106180A (en) 1980-12-24 1980-12-24 Manufacture of mercury cadmium telluride diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55183442A JPS57106180A (en) 1980-12-24 1980-12-24 Manufacture of mercury cadmium telluride diode

Publications (2)

Publication Number Publication Date
JPS57106180A true JPS57106180A (en) 1982-07-01
JPS6259473B2 JPS6259473B2 (enrdf_load_stackoverflow) 1987-12-11

Family

ID=16135835

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55183442A Granted JPS57106180A (en) 1980-12-24 1980-12-24 Manufacture of mercury cadmium telluride diode

Country Status (1)

Country Link
JP (1) JPS57106180A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110931577A (zh) * 2019-11-11 2020-03-27 中国科学院上海技术物理研究所 纵向渐变的等离子激元增强红外宽谱吸收的人工微结构

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6450998U (enrdf_load_stackoverflow) * 1987-09-25 1989-03-29
JPH0824098A (ja) * 1994-07-20 1996-01-30 Hakohide Shiki Seisakusho:Kk 額縁枠の構成部材及びこれを用いた額縁枠並びにこれらの製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110931577A (zh) * 2019-11-11 2020-03-27 中国科学院上海技术物理研究所 纵向渐变的等离子激元增强红外宽谱吸收的人工微结构
CN110931577B (zh) * 2019-11-11 2021-12-31 中国科学院上海技术物理研究所 纵向渐变的等离子激元增强红外宽谱吸收的人工微结构

Also Published As

Publication number Publication date
JPS6259473B2 (enrdf_load_stackoverflow) 1987-12-11

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