JPS5710574B2 - - Google Patents
Info
- Publication number
- JPS5710574B2 JPS5710574B2 JP2340873A JP2340873A JPS5710574B2 JP S5710574 B2 JPS5710574 B2 JP S5710574B2 JP 2340873 A JP2340873 A JP 2340873A JP 2340873 A JP2340873 A JP 2340873A JP S5710574 B2 JPS5710574 B2 JP S5710574B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10W20/065—
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- H10P95/00—
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- H10P14/6324—
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- H10P14/665—
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- H10P14/69391—
Landscapes
- Weting (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
- Electrochemical Coating By Surface Reaction (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Metal Substrates For Printed Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US00239082A US3827949A (en) | 1972-03-29 | 1972-03-29 | Anodic oxide passivated planar aluminum metallurgy system and method of producing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4916393A JPS4916393A (en:Method) | 1974-02-13 |
| JPS5710574B2 true JPS5710574B2 (en:Method) | 1982-02-26 |
Family
ID=22900523
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2340873A Expired JPS5710574B2 (en:Method) | 1972-03-29 | 1973-02-28 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3827949A (en:Method) |
| JP (1) | JPS5710574B2 (en:Method) |
| DE (1) | DE2313106C2 (en:Method) |
| FR (1) | FR2177750A1 (en:Method) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3939047A (en) * | 1971-11-15 | 1976-02-17 | Nippon Electric Co., Ltd. | Method for fabricating electrode structure for a semiconductor device having a shallow junction |
| FR2285716A1 (fr) * | 1974-09-18 | 1976-04-16 | Radiotechnique Compelec | Procede pour la fabrication d'un dispositif semi-conducteur comportant une configuration de conducteurs et dispositif fabrique par ce procede |
| US4005452A (en) * | 1974-11-15 | 1977-01-25 | International Telephone And Telegraph Corporation | Method for providing electrical isolating material in selected regions of a semiconductive material and the product produced thereby |
| US3971710A (en) * | 1974-11-29 | 1976-07-27 | Ibm | Anodized articles and process of preparing same |
| JPS51111069A (en) * | 1975-03-26 | 1976-10-01 | Hitachi Ltd | Semiconductor device |
| DE2539193C3 (de) * | 1975-09-03 | 1979-04-19 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Herstellung eines planeren Leiterbahnsystems für integrierte Halbleiterschaltungen |
| SE7803385L (sv) * | 1978-03-23 | 1979-09-24 | Olsson Kjell Ingvar | Metod att meta vetskors ytspenning och anordning for genomforande av metoden ifraga |
| US4146440A (en) * | 1978-04-03 | 1979-03-27 | Burroughs Corporation | Method for forming an aluminum interconnect structure on an integrated circuit chip |
| DE2902665A1 (de) * | 1979-01-24 | 1980-08-07 | Siemens Ag | Verfahren zum herstellen von integrierten mos-schaltungen in silizium-gate- technologie |
| US4433004A (en) * | 1979-07-11 | 1984-02-21 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor device and a method for manufacturing the same |
| JPS5628522U (en:Method) * | 1979-08-11 | 1981-03-17 | ||
| JPS5633842A (en) * | 1979-08-28 | 1981-04-04 | Nec Corp | Manufacture of semiconductor device |
| FR2466103A1 (fr) * | 1979-09-18 | 1981-03-27 | Lerouzic Jean | Procede de realisation d'un reseau d'interconnexion de composants electroniques a conducteurs en aluminium et isolant en alumine et reseau d'interconnexion obtenu par ce procede |
| JPS56155549A (en) * | 1980-04-30 | 1981-12-01 | Fujitsu Ltd | Manufacture of semiconductor device |
| DE3217026A1 (de) * | 1981-05-06 | 1982-12-30 | Mitsubishi Denki K.K., Tokyo | Halbleitervorrichtung |
| JPS5886742A (ja) * | 1981-11-18 | 1983-05-24 | Nec Corp | 半導体装置の製造方法 |
| US7368045B2 (en) * | 2005-01-27 | 2008-05-06 | International Business Machines Corporation | Gate stack engineering by electrochemical processing utilizing through-gate-dielectric current flow |
| JP2009132974A (ja) * | 2007-11-30 | 2009-06-18 | Fujifilm Corp | 微細構造体 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3741880A (en) * | 1969-10-25 | 1973-06-26 | Nippon Electric Co | Method of forming electrical connections in a semiconductor integrated circuit |
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1972
- 1972-03-29 US US00239082A patent/US3827949A/en not_active Expired - Lifetime
-
1973
- 1973-02-06 FR FR7305440A patent/FR2177750A1/fr not_active Withdrawn
- 1973-02-28 JP JP2340873A patent/JPS5710574B2/ja not_active Expired
- 1973-03-16 DE DE2313106A patent/DE2313106C2/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2177750A1 (en:Method) | 1973-11-09 |
| DE2313106A1 (de) | 1973-10-11 |
| DE2313106C2 (de) | 1985-03-07 |
| JPS4916393A (en:Method) | 1974-02-13 |
| US3827949A (en) | 1974-08-06 |