JPS57103365A - P-n junction diode - Google Patents

P-n junction diode

Info

Publication number
JPS57103365A
JPS57103365A JP17940080A JP17940080A JPS57103365A JP S57103365 A JPS57103365 A JP S57103365A JP 17940080 A JP17940080 A JP 17940080A JP 17940080 A JP17940080 A JP 17940080A JP S57103365 A JPS57103365 A JP S57103365A
Authority
JP
Japan
Prior art keywords
layer
density
junction
region
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17940080A
Other languages
Japanese (ja)
Inventor
Yoshihito Amamiya
Yoshihiko Mizushima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP17940080A priority Critical patent/JPS57103365A/en
Publication of JPS57103365A publication Critical patent/JPS57103365A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To shorten a backward recovery time by providing a majority carrier injection region and a minority carrier absorption region in contact with an electrode on a low-density-side conduction type semiconductor layer constituting the junction and by making the impurity density on the junction side higher than that on the electrode side. CONSTITUTION:A P-N junction 2 is formed, for instance, by an N<+> type semiconductor layer 1 and a P type layer 3, and P<+> type hole injection regions 5 and N<+> type electron absorption regions 7 in plural respectively are made to lie intermediately in a region which is in ohomic contact with the electrode 9 of the layer 3, whereby a diode showing small forward voltage drop is prepared. The impurity density distribution 23 of the P type layer 3 of this diode is formed so that the density on the P-N junction side is high while the density on the side of the region 5 being low. By this consitution, the density of electrons injected into the layer 3 through the intermediary of the junction 2 from the N<+> layer 1, which is in excess of that in the state of thermal equilibrium, can be reduced. Thereby the backward recovery characteristic can be improved and high voltage yield and high velocity can be attained.
JP17940080A 1980-12-18 1980-12-18 P-n junction diode Pending JPS57103365A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17940080A JPS57103365A (en) 1980-12-18 1980-12-18 P-n junction diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17940080A JPS57103365A (en) 1980-12-18 1980-12-18 P-n junction diode

Publications (1)

Publication Number Publication Date
JPS57103365A true JPS57103365A (en) 1982-06-26

Family

ID=16065199

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17940080A Pending JPS57103365A (en) 1980-12-18 1980-12-18 P-n junction diode

Country Status (1)

Country Link
JP (1) JPS57103365A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000016408A1 (en) * 1998-09-10 2000-03-23 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and its manufacturing method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000016408A1 (en) * 1998-09-10 2000-03-23 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and its manufacturing method

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