JPS5710279A - Driving current for light emitting diode and semiconductor laser - Google Patents

Driving current for light emitting diode and semiconductor laser

Info

Publication number
JPS5710279A
JPS5710279A JP8291880A JP8291880A JPS5710279A JP S5710279 A JPS5710279 A JP S5710279A JP 8291880 A JP8291880 A JP 8291880A JP 8291880 A JP8291880 A JP 8291880A JP S5710279 A JPS5710279 A JP S5710279A
Authority
JP
Japan
Prior art keywords
light emitting
semiconductor laser
emitting diode
transistors
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8291880A
Other languages
Japanese (ja)
Inventor
Yukio Minami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP8291880A priority Critical patent/JPS5710279A/en
Publication of JPS5710279A publication Critical patent/JPS5710279A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To reduce the power consumption for the driving circuit to be used for analogue modulation of the light emitting diode or the semiconductor laser by a method wherein a plurality of parallel-connected transistors are connected to the circuit in series, they are driven simultaneously by the same power source and the collector current of each transistor is added and flown to the circuit. CONSTITUTION:The connection of the transistors for the driving circuit to be used for analogue modulation of the light-emitting diode and the semiconductor laser is performed as follows. That is, a plurality of coelectrode formed transistors TR11- TRn are provided, by performing a parallel connection, on the light emitting element connected in between a power source +VEE and a earthing terminal G, the collector current generated by driving these transistors simultaneously is added and supplied to the light emitting element. Through these procedures, the power consumption of the circuit is reduced when compared with the method wherein a transistor for high power and a radiation fin are used and the part mounting space can also be reduced.
JP8291880A 1980-06-20 1980-06-20 Driving current for light emitting diode and semiconductor laser Pending JPS5710279A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8291880A JPS5710279A (en) 1980-06-20 1980-06-20 Driving current for light emitting diode and semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8291880A JPS5710279A (en) 1980-06-20 1980-06-20 Driving current for light emitting diode and semiconductor laser

Publications (1)

Publication Number Publication Date
JPS5710279A true JPS5710279A (en) 1982-01-19

Family

ID=13787619

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8291880A Pending JPS5710279A (en) 1980-06-20 1980-06-20 Driving current for light emitting diode and semiconductor laser

Country Status (1)

Country Link
JP (1) JPS5710279A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0385470A2 (en) * 1989-03-01 1990-09-05 Fujitsu Limited Semiconductor laser driving circuit
US4962375A (en) * 1987-03-27 1990-10-09 Hitachi, Ltd. Driving circuit for a light emitting diode array
US5394419A (en) * 1991-07-24 1995-02-28 Siemens Aktiengesellschaft Circuit arrangement for limiting the power of the optical signal emitted by a laser diode
JP2012059920A (en) * 2010-09-09 2012-03-22 Miyachi Technos Corp Mopa type fiber laser processing device and exciting laser diode power supply device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4962375A (en) * 1987-03-27 1990-10-09 Hitachi, Ltd. Driving circuit for a light emitting diode array
EP0385470A2 (en) * 1989-03-01 1990-09-05 Fujitsu Limited Semiconductor laser driving circuit
US5038189A (en) * 1989-03-01 1991-08-06 Fujitsu Limited Semiconductor laser driving circuit
US5394419A (en) * 1991-07-24 1995-02-28 Siemens Aktiengesellschaft Circuit arrangement for limiting the power of the optical signal emitted by a laser diode
JP2012059920A (en) * 2010-09-09 2012-03-22 Miyachi Technos Corp Mopa type fiber laser processing device and exciting laser diode power supply device

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