JPS57100763A - Lateral transistor with self-aligning base and base contact and method of producing same - Google Patents
Lateral transistor with self-aligning base and base contact and method of producing sameInfo
- Publication number
- JPS57100763A JPS57100763A JP16891081A JP16891081A JPS57100763A JP S57100763 A JPS57100763 A JP S57100763A JP 16891081 A JP16891081 A JP 16891081A JP 16891081 A JP16891081 A JP 16891081A JP S57100763 A JPS57100763 A JP S57100763A
- Authority
- JP
- Japan
- Prior art keywords
- base
- self
- producing same
- lateral transistor
- aligning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/7317—Bipolar thin film transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3215—Doping the layers
- H01L21/32155—Doping polycristalline - or amorphous silicon layers
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US19977180A | 1980-10-23 | 1980-10-23 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57100763A true JPS57100763A (en) | 1982-06-23 |
JPH0241170B2 JPH0241170B2 (ja) | 1990-09-14 |
Family
ID=22738957
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16891081A Granted JPS57100763A (en) | 1980-10-23 | 1981-10-23 | Lateral transistor with self-aligning base and base contact and method of producing same |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0052038B1 (ja) |
JP (1) | JPS57100763A (ja) |
CA (1) | CA1179786A (ja) |
DE (1) | DE3174777D1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6074477A (ja) * | 1983-09-29 | 1985-04-26 | Fujitsu Ltd | 半導体装置及びその製造方法 |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0137992A3 (en) * | 1983-09-29 | 1987-01-21 | Fujitsu Limited | Lateral bipolar transistor formed in a silicon on insulator (soi) substrate |
NL8303467A (nl) * | 1983-10-10 | 1985-05-01 | Philips Nv | Werkwijze voor het vervaardigen van een patroon van geleidend materiaal. |
JPS6081864A (ja) * | 1983-10-12 | 1985-05-09 | Fujitsu Ltd | ラテラル型トランジスタ |
US4897698A (en) * | 1984-10-31 | 1990-01-30 | Texas Instruments Incorporated | Horizontal structure thin film transistor |
EP0180363B1 (en) * | 1984-10-31 | 1994-04-13 | Texas Instruments Incorporated | Horizontal structure transistor and method of fabrication |
GB2178593B (en) * | 1985-08-02 | 1989-07-26 | Stc Plc | Transistor manufacture |
US4792837A (en) * | 1986-02-26 | 1988-12-20 | Ge Solid State Patents, Inc. | Orthogonal bipolar transistor |
US4784966A (en) * | 1987-06-02 | 1988-11-15 | Texas Instruments Incorporated | Self-aligned NPN bipolar transistor built in a double polysilicon CMOS technology |
US5005066A (en) * | 1987-06-02 | 1991-04-02 | Texas Instruments Incorporated | Self-aligned NPN bipolar transistor built in a double polysilicon CMOS technology |
US4922315A (en) * | 1987-11-13 | 1990-05-01 | Kopin Corporation | Control gate lateral silicon-on-insulator bipolar transistor |
US5043786A (en) * | 1989-04-13 | 1991-08-27 | International Business Machines Corporation | Lateral transistor and method of making same |
JPH0483173A (ja) * | 1990-07-26 | 1992-03-17 | Tele Syst:Yugen | 電力量計 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4915374A (ja) * | 1972-05-18 | 1974-02-09 | ||
JPS49123274A (ja) * | 1973-03-29 | 1974-11-26 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1352044A (en) * | 1971-04-21 | 1974-05-15 | Garyainov S A Glazkov I M Raik | Planar semiconductor device |
US4201603A (en) * | 1978-12-04 | 1980-05-06 | Rca Corporation | Method of fabricating improved short channel MOS devices utilizing selective etching and counterdoping of polycrystalline silicon |
-
1981
- 1981-10-22 DE DE8181401665T patent/DE3174777D1/de not_active Expired
- 1981-10-22 EP EP19810401665 patent/EP0052038B1/en not_active Expired
- 1981-10-22 CA CA000388541A patent/CA1179786A/en not_active Expired
- 1981-10-23 JP JP16891081A patent/JPS57100763A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4915374A (ja) * | 1972-05-18 | 1974-02-09 | ||
JPS49123274A (ja) * | 1973-03-29 | 1974-11-26 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6074477A (ja) * | 1983-09-29 | 1985-04-26 | Fujitsu Ltd | 半導体装置及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
DE3174777D1 (en) | 1986-07-10 |
EP0052038B1 (en) | 1986-06-04 |
JPH0241170B2 (ja) | 1990-09-14 |
CA1179786A (en) | 1984-12-18 |
EP0052038A2 (en) | 1982-05-19 |
EP0052038A3 (en) | 1983-01-12 |
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