JPS57100762A - Switching element - Google Patents

Switching element

Info

Publication number
JPS57100762A
JPS57100762A JP17760380A JP17760380A JPS57100762A JP S57100762 A JPS57100762 A JP S57100762A JP 17760380 A JP17760380 A JP 17760380A JP 17760380 A JP17760380 A JP 17760380A JP S57100762 A JPS57100762 A JP S57100762A
Authority
JP
Japan
Prior art keywords
layer
type
regions
emitter
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17760380A
Other languages
Japanese (ja)
Inventor
Kaoru Izawa
Katsuo Asai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TOUYOU DENGU SEISAKUSHO KK
Rohm Co Ltd
Original Assignee
TOUYOU DENGU SEISAKUSHO KK
Rohm Co Ltd
Toyo Electronics Industry Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TOUYOU DENGU SEISAKUSHO KK, Rohm Co Ltd, Toyo Electronics Industry Corp filed Critical TOUYOU DENGU SEISAKUSHO KK
Priority to JP17760380A priority Critical patent/JPS57100762A/en
Publication of JPS57100762A publication Critical patent/JPS57100762A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Abstract

PURPOSE:To obtain an element suitable for output control or the like for a sound signal amplifier by a method wherein a collector and an emitter are fractionized into several pieces and alternately formed and these collectors and emitters are electrically connected to form common electrodes at each collector or emitter. CONSTITUTION:An N<+> buried layer 32 is provided on a P type semiconductor substrate 30 to form an N type epitaxial layer 34 and the layer 34 is partitioned and isolated by an isolating region 36. A plurality of P type diffusion regions 38 partitioned in rectangular shape are formed at equal intervals on the surface section of the layer 34. And a rectangular N type diffusion region 40 with fixed width and length is formed and the regions 38 are arranged with the same shape in the form of m rows and n columns. These P type regions are divided to alternately form collectors C and emitters E and a common collector electrode 42c1 and a common emitter electrode 42E are formed. Meanwhile, the N type diffusion region is set at a base B and a base electrode 42B is formed at the base B.
JP17760380A 1980-12-16 1980-12-16 Switching element Pending JPS57100762A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17760380A JPS57100762A (en) 1980-12-16 1980-12-16 Switching element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17760380A JPS57100762A (en) 1980-12-16 1980-12-16 Switching element

Publications (1)

Publication Number Publication Date
JPS57100762A true JPS57100762A (en) 1982-06-23

Family

ID=16033880

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17760380A Pending JPS57100762A (en) 1980-12-16 1980-12-16 Switching element

Country Status (1)

Country Link
JP (1) JPS57100762A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60110158A (en) * 1983-11-21 1985-06-15 Nec Corp Semiconductor device
JPS6312859U (en) * 1986-07-10 1988-01-27
US5003370A (en) * 1983-05-16 1991-03-26 Fujitsu Limited High power frequency semiconductor device with improved thermal resistance
US7217975B2 (en) 2003-09-12 2007-05-15 Kabushiki Kaisha Toshiba Lateral type semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5003370A (en) * 1983-05-16 1991-03-26 Fujitsu Limited High power frequency semiconductor device with improved thermal resistance
JPS60110158A (en) * 1983-11-21 1985-06-15 Nec Corp Semiconductor device
JPS6312859U (en) * 1986-07-10 1988-01-27
US7217975B2 (en) 2003-09-12 2007-05-15 Kabushiki Kaisha Toshiba Lateral type semiconductor device

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