JPS5692A - Semiconductor memory circuit device - Google Patents

Semiconductor memory circuit device

Info

Publication number
JPS5692A
JPS5692A JP7218679A JP7218679A JPS5692A JP S5692 A JPS5692 A JP S5692A JP 7218679 A JP7218679 A JP 7218679A JP 7218679 A JP7218679 A JP 7218679A JP S5692 A JPS5692 A JP S5692A
Authority
JP
Japan
Prior art keywords
diodes
mostrq9
pair
mostrq7
erase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7218679A
Other languages
Japanese (ja)
Inventor
Yoshio Nishikawa
Tadashi Uchiumi
Takao Hashimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP7218679A priority Critical patent/JPS5692A/en
Publication of JPS5692A publication Critical patent/JPS5692A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)

Abstract

PURPOSE:To reduce the area without losing the function and to enable low power consumption, by constituting at minimum four CMOS transistors and two diodes and compensating the erase of stored information with the leakage current of diodes. CONSTITUTION:The source region of a pair of MOSTRQ9, Q10 in cross connection is connected to one terminal 10 of the power supply and a pair of diodes D1, D2 are connected in back bias between the drain region of MOSTRQ9, 10 and another terminal 9 of the power supply. Further, each gate region of MOSTRQ9, 10 is connected to each drain region of another pair of MOSTRQ7, 8 in common to the address line 6, and each source region of MOSTRQ7, 8 is connected to the digit lines 7, 8, to compensate the erase of stored information with the diodes D1 and D2. Thus, the constitution can be made with at minimum of four MOSTRs and the wirings can be reduced to four.
JP7218679A 1979-06-11 1979-06-11 Semiconductor memory circuit device Pending JPS5692A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7218679A JPS5692A (en) 1979-06-11 1979-06-11 Semiconductor memory circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7218679A JPS5692A (en) 1979-06-11 1979-06-11 Semiconductor memory circuit device

Publications (1)

Publication Number Publication Date
JPS5692A true JPS5692A (en) 1981-01-06

Family

ID=13481923

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7218679A Pending JPS5692A (en) 1979-06-11 1979-06-11 Semiconductor memory circuit device

Country Status (1)

Country Link
JP (1) JPS5692A (en)

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