JPS5690563A - Semiconductor circuit capable of integrating monolithically - Google Patents

Semiconductor circuit capable of integrating monolithically

Info

Publication number
JPS5690563A
JPS5690563A JP16651680A JP16651680A JPS5690563A JP S5690563 A JPS5690563 A JP S5690563A JP 16651680 A JP16651680 A JP 16651680A JP 16651680 A JP16651680 A JP 16651680A JP S5690563 A JPS5690563 A JP S5690563A
Authority
JP
Japan
Prior art keywords
semiconductor circuit
circuit capable
monolithically
integrating
integrating monolithically
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16651680A
Other languages
English (en)
Other versions
JPH0143467B2 (ja
Inventor
Pooru Giyuntaa
Miyunderu Geraruto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of JPS5690563A publication Critical patent/JPS5690563A/ja
Publication of JPH0143467B2 publication Critical patent/JPH0143467B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0826—Combination of vertical complementary transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Amplifiers (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP16651680A 1979-11-26 1980-11-26 Semiconductor circuit capable of integrating monolithically Granted JPS5690563A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19792947599 DE2947599A1 (de) 1979-11-26 1979-11-26 Monolithisch integrierbare halbleiterschaltung

Publications (2)

Publication Number Publication Date
JPS5690563A true JPS5690563A (en) 1981-07-22
JPH0143467B2 JPH0143467B2 (ja) 1989-09-20

Family

ID=6086913

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16651680A Granted JPS5690563A (en) 1979-11-26 1980-11-26 Semiconductor circuit capable of integrating monolithically

Country Status (4)

Country Link
US (1) US4382195A (ja)
EP (1) EP0029538B1 (ja)
JP (1) JPS5690563A (ja)
DE (1) DE2947599A1 (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4463369A (en) * 1981-06-15 1984-07-31 Rca Integrated circuit overload protection device
SE426762B (sv) * 1981-08-28 1983-02-07 Bengt Gustaf Olsson Forsterkare
IT1209647B (it) * 1985-06-24 1989-08-30 Sgs Microelettronica Spa Circuito antisaturazione per transistore pnp integrato.
US4922129A (en) * 1989-01-26 1990-05-01 National Semiconductor Corporation Feed forward darlington circuit with reduced NPN reverse beta sensitivity
JP3315851B2 (ja) * 1995-12-19 2002-08-19 シャープ株式会社 広帯域増幅回路を用いる高速通信素子
US10797656B2 (en) * 2018-08-06 2020-10-06 Analong Devices Global Unlimited Company Breakdown protection circuit for power amplifier
US11303252B2 (en) 2019-09-25 2022-04-12 Analog Devices International Unlimited Company Breakdown protection circuit for power amplifier

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5119585A (ja) * 1974-08-09 1976-02-16 Hitachi Ltd Haigasusanpuringusochiniokeru suibun dasutodojijokyoho
JPS5153449A (ja) * 1974-11-06 1976-05-11 Matsushita Electric Ind Co Ltd
JPS5179584A (ja) * 1974-12-19 1976-07-10 Matsushita Electronics Corp Handotaisochi

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3482111A (en) * 1966-03-04 1969-12-02 Ncr Co High speed logical circuit
US3617827A (en) * 1970-03-30 1971-11-02 Albert Schmitz Semiconductor device with complementary transistors
US3845405A (en) * 1973-05-24 1974-10-29 Rca Corp Composite transistor device with over current protection
JPS5153483A (ja) * 1974-11-06 1976-05-11 Hitachi Ltd
GB1490631A (en) * 1975-01-10 1977-11-02 Plessey Co Ltd Transistor arrangement having low charge storage
NL7712649A (nl) * 1977-11-17 1979-05-21 Philips Nv Geientegreerde schakeling.

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5119585A (ja) * 1974-08-09 1976-02-16 Hitachi Ltd Haigasusanpuringusochiniokeru suibun dasutodojijokyoho
JPS5153449A (ja) * 1974-11-06 1976-05-11 Matsushita Electric Ind Co Ltd
JPS5179584A (ja) * 1974-12-19 1976-07-10 Matsushita Electronics Corp Handotaisochi

Also Published As

Publication number Publication date
JPH0143467B2 (ja) 1989-09-20
DE2947599A1 (de) 1981-05-27
EP0029538B1 (de) 1985-04-10
EP0029538A1 (de) 1981-06-03
US4382195A (en) 1983-05-03

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