JPS5690547A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5690547A
JPS5690547A JP16792179A JP16792179A JPS5690547A JP S5690547 A JPS5690547 A JP S5690547A JP 16792179 A JP16792179 A JP 16792179A JP 16792179 A JP16792179 A JP 16792179A JP S5690547 A JPS5690547 A JP S5690547A
Authority
JP
Japan
Prior art keywords
transistors
chips
base
diodes
vessel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16792179A
Other languages
Japanese (ja)
Inventor
Akira Furumoto
Hiromoto Yamawaki
Masanobu Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16792179A priority Critical patent/JPS5690547A/en
Publication of JPS5690547A publication Critical patent/JPS5690547A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6644—Packaging aspects of high-frequency amplifiers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]

Abstract

PURPOSE:To complete the protection of transistors by a method wherein a matching circuit part is disposed approaching to diodes, which are mutually connected in the reverse directions, or transistors, which intend to protect a protective circuit with active elements diode-connected, and the part is connected between a base and a ground of the transistors. CONSTITUTION:A vessel 12 of beryllia porcelain, etc. with a metallized layer 20 is mounted onto a radiating section 11 in copper, transistor chips 19 to be protected are fastened on the vessel, and diodes for protection or transistors 17, 18 are disposed approaching to the chips. The transistor chips 19 are each connected to a collector electrode 13, an emitter bridge 14, a base electrode 15 and a terminal 16 for base bias through wires 21, 23, 24. The diodes 17, 18 are previously connected between a base and a ground of the transistor chips 19 through a matching circuit part 22 at that time. Thus, a temperature is compensated while the chips are protected effectively against excessive input power.
JP16792179A 1979-12-22 1979-12-22 Semiconductor device Pending JPS5690547A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16792179A JPS5690547A (en) 1979-12-22 1979-12-22 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16792179A JPS5690547A (en) 1979-12-22 1979-12-22 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5690547A true JPS5690547A (en) 1981-07-22

Family

ID=15858519

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16792179A Pending JPS5690547A (en) 1979-12-22 1979-12-22 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5690547A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53108778A (en) * 1977-03-04 1978-09-21 Nec Corp Transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53108778A (en) * 1977-03-04 1978-09-21 Nec Corp Transistor

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