JPS5685861A - Asymmetrical electric field control thyristor and method of manufacturing same - Google Patents

Asymmetrical electric field control thyristor and method of manufacturing same

Info

Publication number
JPS5685861A
JPS5685861A JP15967380A JP15967380A JPS5685861A JP S5685861 A JPS5685861 A JP S5685861A JP 15967380 A JP15967380 A JP 15967380A JP 15967380 A JP15967380 A JP 15967380A JP S5685861 A JPS5685861 A JP S5685861A
Authority
JP
Japan
Prior art keywords
electric field
field control
manufacturing same
control thyristor
asymmetrical electric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15967380A
Other languages
English (en)
Inventor
Jieiyanto Bariga Bantobaru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of JPS5685861A publication Critical patent/JPS5685861A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures
    • H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
JP15967380A 1979-11-16 1980-11-14 Asymmetrical electric field control thyristor and method of manufacturing same Pending JPS5685861A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US9494379A 1979-11-16 1979-11-16

Publications (1)

Publication Number Publication Date
JPS5685861A true JPS5685861A (en) 1981-07-13

Family

ID=22248085

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15967380A Pending JPS5685861A (en) 1979-11-16 1980-11-14 Asymmetrical electric field control thyristor and method of manufacturing same

Country Status (3)

Country Link
EP (1) EP0029932B1 (ja)
JP (1) JPS5685861A (ja)
DE (1) DE3068968D1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07193219A (ja) * 1993-12-27 1995-07-28 Matsushita Electric Works Ltd 静電誘導型半導体装置
JP2003533052A (ja) * 2000-05-11 2003-11-05 セントレ・ナショナル・デ・ラ・レシェルシェ・サイエンティフィーク 縦型パワーコンポーネントのアノード電圧センサ及び短絡に対する防護のための使用方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0144876B1 (de) * 1983-12-07 1988-03-09 BBC Brown Boveri AG Halbleiterbauelement
EP0262485A1 (de) * 1986-10-01 1988-04-06 BBC Brown Boveri AG Halbleiterbauelement mit einer Ätzgrube
EP0311839A1 (de) * 1987-10-16 1989-04-19 BBC Brown Boveri AG Abschaltbares Halbleiterbauelement sowie Schaltungsanordnung mit diesem Bauelement
EP0317802A1 (de) * 1987-11-25 1989-05-31 BBC Brown Boveri AG Abschaltbares Leistungshalbleiterbauelement sowie Verfahren zu dessen Herstellung
GB2213988B (en) * 1987-12-18 1992-02-05 Matsushita Electric Works Ltd Semiconductor device
CN111599859B (zh) * 2019-02-21 2023-06-23 株洲中车时代半导体有限公司 一种具有过压保护功能的晶闸管及制造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4060821A (en) * 1976-06-21 1977-11-29 General Electric Co. Field controlled thyristor with buried grid
JPS542077A (en) * 1977-06-08 1979-01-09 Hitachi Ltd Semiconductor switching element
JPS6046551B2 (ja) * 1978-08-07 1985-10-16 株式会社日立製作所 半導体スイツチング素子およびその製法
JPS5599774A (en) * 1979-01-26 1980-07-30 Semiconductor Res Found Electrostatic induction type thyristor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07193219A (ja) * 1993-12-27 1995-07-28 Matsushita Electric Works Ltd 静電誘導型半導体装置
JP2003533052A (ja) * 2000-05-11 2003-11-05 セントレ・ナショナル・デ・ラ・レシェルシェ・サイエンティフィーク 縦型パワーコンポーネントのアノード電圧センサ及び短絡に対する防護のための使用方法

Also Published As

Publication number Publication date
EP0029932A1 (en) 1981-06-10
DE3068968D1 (en) 1984-09-20
EP0029932B1 (en) 1984-08-15

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