DE3068968D1 - Asymmetrical field controlled thyristor - Google Patents
Asymmetrical field controlled thyristorInfo
- Publication number
- DE3068968D1 DE3068968D1 DE8080106861T DE3068968T DE3068968D1 DE 3068968 D1 DE3068968 D1 DE 3068968D1 DE 8080106861 T DE8080106861 T DE 8080106861T DE 3068968 T DE3068968 T DE 3068968T DE 3068968 D1 DE3068968 D1 DE 3068968D1
- Authority
- DE
- Germany
- Prior art keywords
- controlled thyristor
- field controlled
- asymmetrical field
- asymmetrical
- thyristor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7391—Gated diode structures
- H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US9494379A | 1979-11-16 | 1979-11-16 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3068968D1 true DE3068968D1 (en) | 1984-09-20 |
Family
ID=22248085
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8080106861T Expired DE3068968D1 (en) | 1979-11-16 | 1980-11-07 | Asymmetrical field controlled thyristor |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0029932B1 (de) |
JP (1) | JPS5685861A (de) |
DE (1) | DE3068968D1 (de) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0144876B1 (de) * | 1983-12-07 | 1988-03-09 | BBC Brown Boveri AG | Halbleiterbauelement |
EP0262485A1 (de) * | 1986-10-01 | 1988-04-06 | BBC Brown Boveri AG | Halbleiterbauelement mit einer Ätzgrube |
EP0311839A1 (de) * | 1987-10-16 | 1989-04-19 | BBC Brown Boveri AG | Abschaltbares Halbleiterbauelement sowie Schaltungsanordnung mit diesem Bauelement |
EP0317802A1 (de) * | 1987-11-25 | 1989-05-31 | BBC Brown Boveri AG | Abschaltbares Leistungshalbleiterbauelement sowie Verfahren zu dessen Herstellung |
GB2213988B (en) * | 1987-12-18 | 1992-02-05 | Matsushita Electric Works Ltd | Semiconductor device |
JP2853544B2 (ja) * | 1993-12-27 | 1999-02-03 | 松下電工株式会社 | 静電誘導型半導体装置 |
FR2808922B1 (fr) * | 2000-05-11 | 2003-09-12 | Centre Nat Rech Scient | Capteur de tension d'anode d'un composant de puissance vertical et utilisation en protection de courts-circuits |
CN111599859B (zh) * | 2019-02-21 | 2023-06-23 | 株洲中车时代半导体有限公司 | 一种具有过压保护功能的晶闸管及制造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4060821A (en) * | 1976-06-21 | 1977-11-29 | General Electric Co. | Field controlled thyristor with buried grid |
JPS542077A (en) * | 1977-06-08 | 1979-01-09 | Hitachi Ltd | Semiconductor switching element |
JPS6046551B2 (ja) * | 1978-08-07 | 1985-10-16 | 株式会社日立製作所 | 半導体スイツチング素子およびその製法 |
JPS5599774A (en) * | 1979-01-26 | 1980-07-30 | Semiconductor Res Found | Electrostatic induction type thyristor |
-
1980
- 1980-11-07 DE DE8080106861T patent/DE3068968D1/de not_active Expired
- 1980-11-07 EP EP19800106861 patent/EP0029932B1/de not_active Expired
- 1980-11-14 JP JP15967380A patent/JPS5685861A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
JPS5685861A (en) | 1981-07-13 |
EP0029932A1 (de) | 1981-06-10 |
EP0029932B1 (de) | 1984-08-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8339 | Ceased/non-payment of the annual fee |