JPS5683054A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5683054A
JPS5683054A JP16002179A JP16002179A JPS5683054A JP S5683054 A JPS5683054 A JP S5683054A JP 16002179 A JP16002179 A JP 16002179A JP 16002179 A JP16002179 A JP 16002179A JP S5683054 A JPS5683054 A JP S5683054A
Authority
JP
Japan
Prior art keywords
package
semiconductor chip
brazed
integrated circuit
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16002179A
Other languages
Japanese (ja)
Inventor
Norio Honda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16002179A priority Critical patent/JPS5683054A/en
Publication of JPS5683054A publication Critical patent/JPS5683054A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818Bonding techniques
    • H01L2224/81801Soldering or alloying
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/014Solder alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits

Abstract

PURPOSE:To improve a thermal radiation property and advance mounting density by a method wherein a bump system face-down type semiconductor integrated circuit chip is brazed to a package at a surrounding section of a bump disposing surface. CONSTITUTION:A protective film 2 is formed on a semiconductor substrate 1 with an integrated circuit region 9, a face-down type semiconductor chip 4' to which solder bumps 3 are mounted is placed on a semiconductor package 5 with wiring pads 7 in a shape that the surface is downward directed, and the package 5 and the semiconductor chip 4' are brazed by a frame brazing layer 8 over the whole circumference of a surrounding section 11 to which the bumps 3 are disposed. Thus, a radiating property of the semiconductor chip is improved, mounting density is advanced, and the arithmetic speed of a high-speed logical circuit, etc. can be increased.
JP16002179A 1979-12-10 1979-12-10 Semiconductor device Pending JPS5683054A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16002179A JPS5683054A (en) 1979-12-10 1979-12-10 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16002179A JPS5683054A (en) 1979-12-10 1979-12-10 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5683054A true JPS5683054A (en) 1981-07-07

Family

ID=15706252

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16002179A Pending JPS5683054A (en) 1979-12-10 1979-12-10 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5683054A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5988864A (en) * 1982-11-12 1984-05-22 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS63114222A (en) * 1986-10-31 1988-05-19 Texas Instr Japan Ltd Semiconductor device
EP0429282A2 (en) * 1989-11-20 1991-05-29 Motorola, Inc. Thermal protection circuit for a power semiconductor switch
DE4323799A1 (en) * 1992-07-15 1994-01-20 Toshiba Kawasaki Kk Semiconductor module coupled to pcb by face-down technology - has contact bumps of solder for connecting chip electrodes to circuit board electrodes, with wall piece not in contact with bumps
US5672912A (en) * 1995-11-21 1997-09-30 Sharp Kabushiki Kaisha Resin-sealed type semiconductor device and method for manufacturing the same

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5988864A (en) * 1982-11-12 1984-05-22 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS63114222A (en) * 1986-10-31 1988-05-19 Texas Instr Japan Ltd Semiconductor device
EP0429282A2 (en) * 1989-11-20 1991-05-29 Motorola, Inc. Thermal protection circuit for a power semiconductor switch
DE4323799A1 (en) * 1992-07-15 1994-01-20 Toshiba Kawasaki Kk Semiconductor module coupled to pcb by face-down technology - has contact bumps of solder for connecting chip electrodes to circuit board electrodes, with wall piece not in contact with bumps
DE4323799B4 (en) * 1992-07-15 2005-04-28 Toshiba Kawasaki Kk Semiconductor device and method for its production
US5672912A (en) * 1995-11-21 1997-09-30 Sharp Kabushiki Kaisha Resin-sealed type semiconductor device and method for manufacturing the same

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