JPS5681956A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5681956A
JPS5681956A JP15797879A JP15797879A JPS5681956A JP S5681956 A JPS5681956 A JP S5681956A JP 15797879 A JP15797879 A JP 15797879A JP 15797879 A JP15797879 A JP 15797879A JP S5681956 A JPS5681956 A JP S5681956A
Authority
JP
Japan
Prior art keywords
electrode
semiconductor device
getter agent
plate
pill
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15797879A
Other languages
Japanese (ja)
Inventor
Sumio Shiozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15797879A priority Critical patent/JPS5681956A/en
Publication of JPS5681956A publication Critical patent/JPS5681956A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/26—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device including materials for absorbing or reacting with moisture or other undesired substances, e.g. getters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)

Abstract

PURPOSE:To avoid the deterioration of the properties of a semiconductor device by coating a getter agent on the projected end of a metallic plate forming a pill-prong type package for adsorbing impurity gas in the package produced at the time of its projection welding. CONSTITUTION:An anode electrode 1 is inserted into the lower end of a cylindrical ceramic material 2 forming a pill-prong type package 8, and a mesa type semiconductor pellet 4 using GaAs or the like is secured to the upper end thereof. Subsquently, an annular metallic plate 3 is bonded with the peripheral edge externally projected to the upper end of the ceramic material 2, an electrode 5 provided at the pellet 4 is bonded using a fine wire 6 thereto, and the upper open end is covered with a cathode electrode 7. With this configuration getter agent 9 containing mainly silicone resin is coated on the inner periphery of the hole facing the plate 3. Thus, impurity gas produced upon fixing of the electrode 7 to the plate 3 by projection welding is adsorbed to the getter agent 9, thereby eliminating the deterioration of the properties of the semiconductor device.
JP15797879A 1979-12-07 1979-12-07 Semiconductor device Pending JPS5681956A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15797879A JPS5681956A (en) 1979-12-07 1979-12-07 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15797879A JPS5681956A (en) 1979-12-07 1979-12-07 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5681956A true JPS5681956A (en) 1981-07-04

Family

ID=15661570

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15797879A Pending JPS5681956A (en) 1979-12-07 1979-12-07 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5681956A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4768081A (en) * 1984-11-17 1988-08-30 Messerschmitt-Boelkow-Blohm Gmbh Process for encapsulating microelectronic circuits with organic components

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS497633A (en) * 1972-03-28 1974-01-23

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS497633A (en) * 1972-03-28 1974-01-23

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4768081A (en) * 1984-11-17 1988-08-30 Messerschmitt-Boelkow-Blohm Gmbh Process for encapsulating microelectronic circuits with organic components

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