JPS5676586A - Hall element substrate for hall head - Google Patents
Hall element substrate for hall headInfo
- Publication number
- JPS5676586A JPS5676586A JP15296179A JP15296179A JPS5676586A JP S5676586 A JPS5676586 A JP S5676586A JP 15296179 A JP15296179 A JP 15296179A JP 15296179 A JP15296179 A JP 15296179A JP S5676586 A JPS5676586 A JP S5676586A
- Authority
- JP
- Japan
- Prior art keywords
- hall element
- hall
- forming
- head
- element substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 230000004907 flux Effects 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 229910000859 α-Fe Inorganic materials 0.000 abstract 2
- 229910018605 Ni—Zn Inorganic materials 0.000 abstract 1
- 229910001245 Sb alloy Inorganic materials 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/80—Constructional details
Landscapes
- Hall/Mr Elements (AREA)
Abstract
PURPOSE:To improve the S/N ratio and withstand voltage of a Hall element by improving the yield in the manufacture of the element by integrating the magnetic flux converging piece to the substrate and forming the Hall element thereon. CONSTITUTION:Ni-Zn ferrite substrate 2 is formed with groove, and a magnetic flux converging piece 21 is thus formed. Nonmagnetic material 43 is buried in the groove 22, and a nonmagnetic film 41 of SiO2 is thus formed. The SiO2 of the piece 21 is removed, Al2O3 is so sputtered to cover the ferrite 2, thereby forming a film 42. In-Sb alloy 3 is accumulated in the recess becoming the Hall element, and protective films 51, 52 are formed, thereby forming a Hall element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15296179A JPS5676586A (en) | 1979-11-28 | 1979-11-28 | Hall element substrate for hall head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15296179A JPS5676586A (en) | 1979-11-28 | 1979-11-28 | Hall element substrate for hall head |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5676586A true JPS5676586A (en) | 1981-06-24 |
Family
ID=15551934
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15296179A Pending JPS5676586A (en) | 1979-11-28 | 1979-11-28 | Hall element substrate for hall head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5676586A (en) |
-
1979
- 1979-11-28 JP JP15296179A patent/JPS5676586A/en active Pending
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