JPS5674946A - Microwave circuit substrate - Google Patents

Microwave circuit substrate

Info

Publication number
JPS5674946A
JPS5674946A JP15152379A JP15152379A JPS5674946A JP S5674946 A JPS5674946 A JP S5674946A JP 15152379 A JP15152379 A JP 15152379A JP 15152379 A JP15152379 A JP 15152379A JP S5674946 A JPS5674946 A JP S5674946A
Authority
JP
Japan
Prior art keywords
substrate
microwave circuit
volume
circuit substrate
factor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15152379A
Other languages
Japanese (ja)
Inventor
Hideki Furubayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP15152379A priority Critical patent/JPS5674946A/en
Publication of JPS5674946A publication Critical patent/JPS5674946A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64Impedance arrangements
    • H01L23/66High-frequency adaptations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64Impedance arrangements
    • H01L2223/66High-frequency adaptations
    • H01L2223/6605High-frequency electrical connections
    • H01L2223/6627Waveguides, e.g. microstrip line, strip line, coplanar line
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1903Structure including wave guides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3011Impedance

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Waveguides (AREA)

Abstract

PURPOSE:To eliminate a floating volume and realize satisfactory impedance matching over a wide band by changing the dielectric factor of microwave circuit substrate. CONSTITUTION:A microwave circuit substrate 7 has conductive films 8, 8' on the front/back surface and routes 3, 4 connected by ribbons 15, 15'. The both sides of the substrate have dielectric factors epsilon1, epsilon2 respectively and the other parts have an intermediate value between epsilon1 and epsilon2. A volume CT per unit area SO is worked out by height a and height b of the substrate and a distance X from the end of the substrate 1. Route impedance ZO represents a prearranged relationship between an overall dielectric factor epsilonT and a propagation factor of electric wave inside the substrate 7. If a conductive film 8 is formed using this relationship, the route of the substrate 7 shows a condition where the floating volume does not exist, so that it is possible to connect the conductive films 3 and 4 with the floating volume being set at ''0''. For this reason, a satisfactory impedance matching can be obtained over a wide range and a smooth signal propagation realized.
JP15152379A 1979-11-22 1979-11-22 Microwave circuit substrate Pending JPS5674946A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15152379A JPS5674946A (en) 1979-11-22 1979-11-22 Microwave circuit substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15152379A JPS5674946A (en) 1979-11-22 1979-11-22 Microwave circuit substrate

Publications (1)

Publication Number Publication Date
JPS5674946A true JPS5674946A (en) 1981-06-20

Family

ID=15520369

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15152379A Pending JPS5674946A (en) 1979-11-22 1979-11-22 Microwave circuit substrate

Country Status (1)

Country Link
JP (1) JPS5674946A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60134483A (en) * 1983-12-22 1985-07-17 Nec Corp Semiconductor device
US5173666A (en) * 1992-03-27 1992-12-22 The United States Of America As Represented By The Secretary Of The Army Microstrip-to-inverted-microstrip transition
FR2900501A1 (en) * 2006-04-26 2007-11-02 Commissariat Energie Atomique HYPERFREQUENCY OPERATING SILICON INTEGRATED CIRCUIT AND METHOD FOR MANUFACTURING THE SAME

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60134483A (en) * 1983-12-22 1985-07-17 Nec Corp Semiconductor device
JPH0116029B2 (en) * 1983-12-22 1989-03-22 Nippon Electric Co
US5173666A (en) * 1992-03-27 1992-12-22 The United States Of America As Represented By The Secretary Of The Army Microstrip-to-inverted-microstrip transition
FR2900501A1 (en) * 2006-04-26 2007-11-02 Commissariat Energie Atomique HYPERFREQUENCY OPERATING SILICON INTEGRATED CIRCUIT AND METHOD FOR MANUFACTURING THE SAME

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