JPS5657333A - Gate reverse bias circuit of semiconductor for electric power - Google Patents

Gate reverse bias circuit of semiconductor for electric power

Info

Publication number
JPS5657333A
JPS5657333A JP13406879A JP13406879A JPS5657333A JP S5657333 A JPS5657333 A JP S5657333A JP 13406879 A JP13406879 A JP 13406879A JP 13406879 A JP13406879 A JP 13406879A JP S5657333 A JPS5657333 A JP S5657333A
Authority
JP
Japan
Prior art keywords
source
reverse bias
gate
pulse
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13406879A
Other languages
Japanese (ja)
Inventor
Michiharu Ishido
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP13406879A priority Critical patent/JPS5657333A/en
Publication of JPS5657333A publication Critical patent/JPS5657333A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/73—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for dc voltages or currents

Landscapes

  • Thyristor Switches And Gates (AREA)
  • Electronic Switches (AREA)

Abstract

PURPOSE:To ensure application of the desired gate reverse bias through a simple circuit constitution without impairing the on-pulse to be applied to the SCR, by installing the 2nd transistor which gives an on/off control to the 1st transistor by the output of the pulse generating source. CONSTITUTION:The pulse genertaing source 2 is connected in positive polarity between the gate G of the SCR1 and the cathode K via the resistance 4, and the reverse bias powe source 3 is connected in reverse polarity and in parallel to the source 2 via the 1st transistor TR8. The base of the TR8 is connected to the collector via the resistances 6 and 5, and the 2nd TR9 is connected between the emitter and the joint of the resistances 6 and 5. And the base of the TR9 is connected via the resistance 7 to the joint of the positive pole terminal of the source 2 and the resistance 4. Then an on/off control is given to the TR9 with the pulse supplied from the source 2 to give a change to the base potential of the TR8. Thus the desired reverse bias can be applied to the gate G of the SCR1.
JP13406879A 1979-10-16 1979-10-16 Gate reverse bias circuit of semiconductor for electric power Pending JPS5657333A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13406879A JPS5657333A (en) 1979-10-16 1979-10-16 Gate reverse bias circuit of semiconductor for electric power

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13406879A JPS5657333A (en) 1979-10-16 1979-10-16 Gate reverse bias circuit of semiconductor for electric power

Publications (1)

Publication Number Publication Date
JPS5657333A true JPS5657333A (en) 1981-05-19

Family

ID=15119617

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13406879A Pending JPS5657333A (en) 1979-10-16 1979-10-16 Gate reverse bias circuit of semiconductor for electric power

Country Status (1)

Country Link
JP (1) JPS5657333A (en)

Similar Documents

Publication Publication Date Title
JPS5421102A (en) Semiconductor device circuit
JPS5657333A (en) Gate reverse bias circuit of semiconductor for electric power
JPS5642409A (en) Output amplifying circuit
JPS6449290A (en) Semiconductor laser device driving circuit
JPS579133A (en) Semiconductor logical circuit device
JPS5515511A (en) Constant current circuit
JPS548452A (en) Analog gate circuit
JPS5545259A (en) Transistor output circuit
JPS5752175A (en) Semiconductor device
JPS5539457A (en) Pulse generation circuit
JPS57188137A (en) Integrated logical circuit
JPS54117663A (en) Amplifier
JPS5571057A (en) Current limiting circuit
JPS53132752A (en) Constant current circuit
JPS51116963A (en) A.c. control circuit
JPS53148221A (en) Vertical deflection output circuit
JPS52133760A (en) Intergrated circuit
JPS57107638A (en) Logical cell for integrated circuit
JPS54954A (en) Darlington connection circuit
JPS55132115A (en) Non-linear amplifier
JPS559241A (en) Constant voltage circuit
JPS5752161A (en) Rise and fall detecting circuit for signal waveform
JPS5539456A (en) Pulse generation circuit
JPS5758405A (en) Semiconductor electric circuit
JPS5250156A (en) Pulse driving circuit