JPS5656681A - Mos condenser - Google Patents

Mos condenser

Info

Publication number
JPS5656681A
JPS5656681A JP13505880A JP13505880A JPS5656681A JP S5656681 A JPS5656681 A JP S5656681A JP 13505880 A JP13505880 A JP 13505880A JP 13505880 A JP13505880 A JP 13505880A JP S5656681 A JPS5656681 A JP S5656681A
Authority
JP
Japan
Prior art keywords
mos
condenser
mos condenser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13505880A
Other languages
Japanese (ja)
Inventor
Daburiyu Shiyureiyaa Jiyooji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Northrop Grumman Space and Mission Systems Corp
Original Assignee
TRW Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TRW Inc filed Critical TRW Inc
Publication of JPS5656681A publication Critical patent/JPS5656681A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP13505880A 1979-10-01 1980-09-27 Mos condenser Pending JPS5656681A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US8027879A 1979-10-01 1979-10-01

Publications (1)

Publication Number Publication Date
JPS5656681A true JPS5656681A (en) 1981-05-18

Family

ID=22156360

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13505880A Pending JPS5656681A (en) 1979-10-01 1980-09-27 Mos condenser

Country Status (4)

Country Link
JP (1) JPS5656681A (en)
DE (1) DE3034445A1 (en)
FR (1) FR2466863A1 (en)
GB (1) GB2060253A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01133354A (en) * 1987-11-19 1989-05-25 Sanyo Electric Co Ltd Semiconductor integrated circuit and manufacture thereof

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6585455B1 (en) 1992-08-18 2003-07-01 Shell Oil Company Rocker arm marine tensioning system
US6974744B1 (en) 2000-09-05 2005-12-13 Marvell International Ltd. Fringing capacitor structure
US6538300B1 (en) * 2000-09-14 2003-03-25 Vishay Intertechnology, Inc. Precision high-frequency capacitor formed on semiconductor substrate
US7151036B1 (en) 2002-07-29 2006-12-19 Vishay-Siliconix Precision high-frequency capacitor formed on semiconductor substrate
US6980414B1 (en) 2004-06-16 2005-12-27 Marvell International, Ltd. Capacitor structure in a semiconductor device
KR102068808B1 (en) * 2018-01-31 2020-01-22 삼성전기주식회사 Capacitor component

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01133354A (en) * 1987-11-19 1989-05-25 Sanyo Electric Co Ltd Semiconductor integrated circuit and manufacture thereof

Also Published As

Publication number Publication date
DE3034445A1 (en) 1981-04-16
GB2060253A (en) 1981-04-29
FR2466863A1 (en) 1981-04-10

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