JPS5654072A - Method of forming polycrystalling silicon layer and method of manufacturing nonplanar mos transistor in automatic positioning type - Google Patents

Method of forming polycrystalling silicon layer and method of manufacturing nonplanar mos transistor in automatic positioning type

Info

Publication number
JPS5654072A
JPS5654072A JP13006480A JP13006480A JPS5654072A JP S5654072 A JPS5654072 A JP S5654072A JP 13006480 A JP13006480 A JP 13006480A JP 13006480 A JP13006480 A JP 13006480A JP S5654072 A JPS5654072 A JP S5654072A
Authority
JP
Japan
Prior art keywords
polycrystalling
forming
mos transistor
silicon layer
automatic positioning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13006480A
Other languages
English (en)
Inventor
Tone Yuujiennu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of JPS5654072A publication Critical patent/JPS5654072A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Element Separation (AREA)
  • Formation Of Insulating Films (AREA)
JP13006480A 1979-09-18 1980-09-18 Method of forming polycrystalling silicon layer and method of manufacturing nonplanar mos transistor in automatic positioning type Pending JPS5654072A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7923242A FR2466101A1 (fr) 1979-09-18 1979-09-18 Procede de formation de couches de silicium polycristallin localisees sur des zones recouvertes de silice d'une plaquette de silicium et application a la fabrication d'un transistor mos non plan autoaligne

Publications (1)

Publication Number Publication Date
JPS5654072A true JPS5654072A (en) 1981-05-13

Family

ID=9229752

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13006480A Pending JPS5654072A (en) 1979-09-18 1980-09-18 Method of forming polycrystalling silicon layer and method of manufacturing nonplanar mos transistor in automatic positioning type

Country Status (5)

Country Link
US (1) US4420379A (ja)
EP (1) EP0026686B1 (ja)
JP (1) JPS5654072A (ja)
DE (1) DE3063148D1 (ja)
FR (1) FR2466101A1 (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2165090A (en) * 1984-09-26 1986-04-03 Philips Electronic Associated Improving the field distribution in high voltage semiconductor devices
US5072266A (en) * 1988-12-27 1991-12-10 Siliconix Incorporated Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry
US5466616A (en) * 1994-04-06 1995-11-14 United Microelectronics Corp. Method of producing an LDMOS transistor having reduced dimensions, reduced leakage, and a reduced propensity to latch-up
US5567634A (en) * 1995-05-01 1996-10-22 National Semiconductor Corporation Method of fabricating self-aligned contact trench DMOS transistors
GB2362755A (en) * 2000-05-25 2001-11-28 Nanogate Ltd Thin film field effect transistor with a conical structure

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3345274A (en) * 1964-04-22 1967-10-03 Westinghouse Electric Corp Method of making oxide film patterns
US3438873A (en) * 1966-05-11 1969-04-15 Bell Telephone Labor Inc Anodic treatment to alter solubility of dielectric films
US3627647A (en) * 1969-05-19 1971-12-14 Cogar Corp Fabrication method for semiconductor devices
US3640806A (en) * 1970-01-05 1972-02-08 Nippon Telegraph & Telephone Semiconductor device and method of producing the same
US3764491A (en) * 1971-12-13 1973-10-09 Bell Telephone Labor Inc Electrolytic oxidation of silicon
US3954523A (en) * 1975-04-14 1976-05-04 International Business Machines Corporation Process for fabricating devices having dielectric isolation utilizing anodic treatment and selective oxidation
JPS6027179B2 (ja) * 1975-11-05 1985-06-27 日本電気株式会社 多孔質シリコンの形成方法
FR2340619A1 (fr) * 1976-02-04 1977-09-02 Radiotechnique Compelec Perfectionnement au procede de fabrication de dispositifs semiconducteurs et dispositifs ainsi obtenus
JPS5362985A (en) * 1976-11-18 1978-06-05 Toshiba Corp Mis type field effect transistor and its production
US4116720A (en) * 1977-12-27 1978-09-26 Burroughs Corporation Method of making a V-MOS field effect transistor for a dynamic memory cell having improved capacitance

Also Published As

Publication number Publication date
US4420379A (en) 1983-12-13
FR2466101B1 (ja) 1983-07-01
EP0026686A1 (fr) 1981-04-08
DE3063148D1 (en) 1983-06-16
EP0026686B1 (fr) 1983-05-11
FR2466101A1 (fr) 1981-03-27

Similar Documents

Publication Publication Date Title
JPS55107268A (en) Method of fabricating mos for forming source and drain regions in substrate
JPS5615529A (en) Semiconductor device and method of fabricating same
JPS55160473A (en) Semiconductor device and method of fabricating same
JPS5623779A (en) Semiconductor device and method of manufacturing same
JPS56160074A (en) Method of manufacturing mos field effect transistor device
DE3174468D1 (en) Semiconductor device and method of manufacturing the same
GB2065369B (en) Method and an apparatus for manufacturing silicon layer
DE3069594D1 (en) Semiconductor device and method of manufacturing the same
DE3066941D1 (en) Masterslice semiconductor device and method of producing it
JPS551194A (en) Method of manufacturing mos semiconductor
JPS5650578A (en) Semiconductor device and method of manufacturing same
JPS571260A (en) Semiconductor device and method of manufacturing same
DE3279831D1 (en) Integrated semiconductor device and method of fabricating said device
JPS55107228A (en) Method of and device for fabricating amorphous silicon semiconductor
JPS5534500A (en) Integrated mos semiconductor memory and method of manufacturing same
DE3070994D1 (en) A semiconductor device and a method of manufacturing a semiconductor device
JPS55132054A (en) Semiconductor device and method of fabricating same
JPS5696868A (en) Method of manufacturing semiconductor device
JPS5596653A (en) Semiconductor device and method of fabricating same
DE3068271D1 (en) A semiconductor device and a method of manufacturing a semiconductor device
DE3278605D1 (en) Intermediate structure for use in the manufacture of semiconductor devices, method of making field effect transistors and transistors
GB2104722B (en) Mos semiconductor device and method of manufacturing the same
JPS5654072A (en) Method of forming polycrystalling silicon layer and method of manufacturing nonplanar mos transistor in automatic positioning type
JPS5693366A (en) Method of manufacturing semiconductor device
DE3380285D1 (en) Mos semiconductor device and method of producing the same