JPS56501863A - - Google Patents

Info

Publication number
JPS56501863A
JPS56501863A JP81500584A JP50058481A JPS56501863A JP S56501863 A JPS56501863 A JP S56501863A JP 81500584 A JP81500584 A JP 81500584A JP 50058481 A JP50058481 A JP 50058481A JP S56501863 A JPS56501863 A JP S56501863A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP81500584A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS56501863A publication Critical patent/JPS56501863A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0817—Thyristors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electronic Switches (AREA)
  • Thyristors (AREA)
JP81500584A 1979-12-28 1980-12-22 Pending JPS56501863A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/107,778 US4250409A (en) 1979-12-28 1979-12-28 Control circuitry using a pull-down transistor for high voltage field terminated diode solid-state switches

Publications (1)

Publication Number Publication Date
JPS56501863A true JPS56501863A (ja) 1981-12-17

Family

ID=22318426

Family Applications (1)

Application Number Title Priority Date Filing Date
JP81500584A Pending JPS56501863A (ja) 1979-12-28 1980-12-22

Country Status (8)

Country Link
US (1) US4250409A (ja)
EP (1) EP0045310B1 (ja)
JP (1) JPS56501863A (ja)
KR (1) KR830004730A (ja)
CA (1) CA1146639A (ja)
DE (1) DE3071713D1 (ja)
IT (1) IT1134897B (ja)
WO (1) WO1981001925A1 (ja)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4516037A (en) * 1978-12-20 1985-05-07 At&T Bell Laboratories Control circuitry for high voltage solid-state switches
US4349751A (en) * 1980-02-11 1982-09-14 Bell Telephone Laboratories, Incorporated Control circuitry using a pull-down transistor for high voltage solid-state switches
US4345163A (en) * 1980-05-15 1982-08-17 Bell Telephone Laboratories, Incorporated Control circuitry for high voltage solid-state switches
US4447744A (en) * 1981-12-22 1984-05-08 Bell Telephone Laboratories, Incorporated Control circuitry for high voltage solid-state switches
US5278076A (en) * 1990-02-28 1994-01-11 At&T Bell Laboratories Method of marking a lateral mos controlled thyristor
US6020222A (en) * 1997-12-16 2000-02-01 Advanced Micro Devices, Inc. Silicon oxide insulator (SOI) semiconductor having selectively linked body
JP4712934B2 (ja) * 2000-03-06 2011-06-29 ソニー株式会社 情報信号再生装置
US6777484B2 (en) * 2001-08-08 2004-08-17 Basell Poliolefine Italia S.P.A. Polypropylene graft copolymer/fluorinated polyolefin blends

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS506272A (ja) * 1973-05-17 1975-01-22
JPS5271162A (en) * 1975-12-11 1977-06-14 Toshiba Corp Thyristor gate circuit

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3737721A (en) * 1971-01-22 1973-06-05 Honeywell Inc Computer flash with remote sensor and two-wire control of flash firing and quench
JPS5629458B2 (ja) * 1973-07-02 1981-07-08
SE392783B (sv) * 1975-06-19 1977-04-18 Asea Ab Halvledaranordning innefattande en tyristor och en felteffekttransistordel
US4060821A (en) * 1976-06-21 1977-11-29 General Electric Co. Field controlled thyristor with buried grid
US4132996A (en) * 1976-11-08 1979-01-02 General Electric Company Electric field-controlled semiconductor device
US4117350A (en) * 1977-03-31 1978-09-26 Rca Corporation Switching circuit
US4242697A (en) * 1979-03-14 1980-12-30 Bell Telephone Laboratories, Incorporated Dielectrically isolated high voltage semiconductor devices

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS506272A (ja) * 1973-05-17 1975-01-22
JPS5271162A (en) * 1975-12-11 1977-06-14 Toshiba Corp Thyristor gate circuit

Also Published As

Publication number Publication date
EP0045310A1 (en) 1982-02-10
EP0045310A4 (en) 1982-04-29
US4250409A (en) 1981-02-10
IT8026949A0 (it) 1980-12-24
EP0045310B1 (en) 1986-08-20
DE3071713D1 (en) 1986-09-25
KR830004730A (ko) 1983-07-16
WO1981001925A1 (en) 1981-07-09
IT1134897B (it) 1986-08-20
CA1146639A (en) 1983-05-17

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