JPS5648183A - Photosensor - Google Patents

Photosensor

Info

Publication number
JPS5648183A
JPS5648183A JP12359779A JP12359779A JPS5648183A JP S5648183 A JPS5648183 A JP S5648183A JP 12359779 A JP12359779 A JP 12359779A JP 12359779 A JP12359779 A JP 12359779A JP S5648183 A JPS5648183 A JP S5648183A
Authority
JP
Japan
Prior art keywords
type
electrode
junction
type material
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12359779A
Other languages
Japanese (ja)
Inventor
Koji Mori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to JP12359779A priority Critical patent/JPS5648183A/en
Publication of JPS5648183A publication Critical patent/JPS5648183A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To improve quantum efficiency by forming P type or N type material layers on both sides of an N type or a P type crystal to form two diodes which are connected in series in reverse direction. CONSTITUTION:On a metal electrode 2, a P type material 3 of amorphous form, etc., is sticked all over, an N type material 4 which can form a hetero junction with the material 3 is grown on it, a material 5 the same as the material 3 is formed on the material 4, and a metallic material 6 is formed on the material 5. By so doing, two P-N junction diodes connected in reverse direction are obtained. Next, a transparent electrode 7 is attached to the incidence side of the N type material and a metal electrode 8 is attached to the opposite face of the material. If positive potential is given to the electrode 7, negative potential is given to electrodes 2, 6 and 8, and photons enter into the electrode 7 and the junction faces 9 and 10, positive holes are formed, are drawn by the field and flow to the electrodes 2 and 6 as a photoelectric current. It mans that the photoelectric current is doubled, and since the light enters in a direction parallel to the junction faces 9 and 10, quantum efficiency is improved. These N type material and P type material may be changed with each other.
JP12359779A 1979-09-26 1979-09-26 Photosensor Pending JPS5648183A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12359779A JPS5648183A (en) 1979-09-26 1979-09-26 Photosensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12359779A JPS5648183A (en) 1979-09-26 1979-09-26 Photosensor

Publications (1)

Publication Number Publication Date
JPS5648183A true JPS5648183A (en) 1981-05-01

Family

ID=14864544

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12359779A Pending JPS5648183A (en) 1979-09-26 1979-09-26 Photosensor

Country Status (1)

Country Link
JP (1) JPS5648183A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6331550U (en) * 1986-08-18 1988-03-01

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6331550U (en) * 1986-08-18 1988-03-01

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