JPS5643831A - Lamination type cmos semiconductor device - Google Patents
Lamination type cmos semiconductor deviceInfo
- Publication number
- JPS5643831A JPS5643831A JP11979679A JP11979679A JPS5643831A JP S5643831 A JPS5643831 A JP S5643831A JP 11979679 A JP11979679 A JP 11979679A JP 11979679 A JP11979679 A JP 11979679A JP S5643831 A JPS5643831 A JP S5643831A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- lamination type
- type cmos
- circuit
- cmos semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
- H03K19/0948—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET using CMOS or complementary insulated gate field-effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Logic Circuits (AREA)
Abstract
PURPOSE:To operate a semiconductor device with small electric power by connecting some of inverters in series to the electric power source of the semiconductor device. CONSTITUTION:Not only by controlling the threshold value of the transistor low but also by selecting constants of oscillating circuit 2, buffer circuit 3 and frequency- dividing circuit 4, I0=IB+ID is realized. Further, an interchange of signals is carried out between oscillating circuit 2 and buffer circuit 3. This can be realized by setting the threshold level of each transistor a quarter the power voltage in case of two-layer structure.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11979679A JPS5643831A (en) | 1979-09-18 | 1979-09-18 | Lamination type cmos semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11979679A JPS5643831A (en) | 1979-09-18 | 1979-09-18 | Lamination type cmos semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5643831A true JPS5643831A (en) | 1981-04-22 |
Family
ID=14770429
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11979679A Pending JPS5643831A (en) | 1979-09-18 | 1979-09-18 | Lamination type cmos semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5643831A (en) |
-
1979
- 1979-09-18 JP JP11979679A patent/JPS5643831A/en active Pending
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