JPS564239A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS564239A JPS564239A JP7974179A JP7974179A JPS564239A JP S564239 A JPS564239 A JP S564239A JP 7974179 A JP7974179 A JP 7974179A JP 7974179 A JP7974179 A JP 7974179A JP S564239 A JPS564239 A JP S564239A
- Authority
- JP
- Japan
- Prior art keywords
- ink
- isobutyl methacrylate
- glass
- crystalline glass
- splashing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To perform sealing-up with a crystalline glass whose main constituents are ZnO, B2O5 and SiO2, by changing a medium comprising diethylene glycol dibutyl ether and isobutyl methacrylate ester into ash or splashing the medium at a temperature not higher than the softening point of the crystalline glass. CONSTITUTION:2-50wt% of isobutyl methacrylate is dissolved in diethylene glycol dibutyl ether. The solution is kneaded with a crystalline glass whose main constituents are ZnO, B2O3 and SiO2 to prepare printing ink. The molecular weight of the isobutyl methacrylate is set at 10<6> or less so that changing to ash and splashing are facilitated, the quantity of residual carbon is reduced and the electric properties of a semiconductor device are not deteriorated. The viscosity of the ink is adjusted to about 1.5-5X10<4> cp. The ink is printed on a P-N junction. The printed ink is maintained at the softening point of the glass for about 5-30min. As a result, no bubbles and pinholes are produced, glass projections are greatly decreased, following work is facilitated, pattern accuracy is enhanced and production yield is improved.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP54079741A JPS5846058B2 (en) | 1979-06-26 | 1979-06-26 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP54079741A JPS5846058B2 (en) | 1979-06-26 | 1979-06-26 | Manufacturing method of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS564239A true JPS564239A (en) | 1981-01-17 |
JPS5846058B2 JPS5846058B2 (en) | 1983-10-14 |
Family
ID=13698636
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP54079741A Expired JPS5846058B2 (en) | 1979-06-26 | 1979-06-26 | Manufacturing method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5846058B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6135800A (en) * | 1984-07-26 | 1986-02-20 | 株式会社林原生物化学研究所 | Production of crystalline alpha-maltose |
US8147615B2 (en) * | 2004-11-05 | 2012-04-03 | Infineon Technologies Ag | Method of fabricating semiconductor cleaners |
-
1979
- 1979-06-26 JP JP54079741A patent/JPS5846058B2/en not_active Expired
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6135800A (en) * | 1984-07-26 | 1986-02-20 | 株式会社林原生物化学研究所 | Production of crystalline alpha-maltose |
JPH0543360B2 (en) * | 1984-07-26 | 1993-07-01 | Hayashibara Biochem Lab | |
US8147615B2 (en) * | 2004-11-05 | 2012-04-03 | Infineon Technologies Ag | Method of fabricating semiconductor cleaners |
US8409363B2 (en) | 2004-11-05 | 2013-04-02 | Infineon Technologies Ag | Method of fabricating semiconductor cleaners |
US8647441B2 (en) | 2004-11-05 | 2014-02-11 | Infineon Technologies Ag | Method of fabricating semiconductor cleaners |
US9529366B2 (en) | 2004-11-05 | 2016-12-27 | Infineon Technologies Ag | Method of fabricating semiconductor cleaners |
Also Published As
Publication number | Publication date |
---|---|
JPS5846058B2 (en) | 1983-10-14 |
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