JPS5641897A - Liquid-phase epitaxially-growing apparatus for oxide single crystal thin film - Google Patents

Liquid-phase epitaxially-growing apparatus for oxide single crystal thin film

Info

Publication number
JPS5641897A
JPS5641897A JP11647179A JP11647179A JPS5641897A JP S5641897 A JPS5641897 A JP S5641897A JP 11647179 A JP11647179 A JP 11647179A JP 11647179 A JP11647179 A JP 11647179A JP S5641897 A JPS5641897 A JP S5641897A
Authority
JP
Japan
Prior art keywords
melt
substrates
single crystal
jig
crystal thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11647179A
Other languages
Japanese (ja)
Inventor
Taketoshi Hibiya
Kozaburo Suzuki
Susumu Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11647179A priority Critical patent/JPS5641897A/en
Publication of JPS5641897A publication Critical patent/JPS5641897A/en
Pending legal-status Critical Current

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Landscapes

  • Inorganic Insulating Materials (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Thin Magnetic Films (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To make film thickness uniform and enable mass production of thin films by holding substrates at fixed positions in a melt with a position detector detecting communication between a substrate supporting jig and the melt and a means determining the crucible-substrate position on the basis of detected positions.
CONSTITUTION: When substrate supporting platinum jig 2 is lowered with raising or lowering motor 8 until the jig tip contacts with melt 7 for epitaxially growing single crystal thin films, a position detector acts to detect the set position and transfers it to timing relay 10. Relay 10 stops motor 8 on the basis of the signal. Thus, substrates 11, 12 are automatically held at optimum positions in melt 7. After the passage of a preset fixed time the substrates are pulled up from melt 7 with motor 8.
COPYRIGHT: (C)1981,JPO&Japio
JP11647179A 1979-09-11 1979-09-11 Liquid-phase epitaxially-growing apparatus for oxide single crystal thin film Pending JPS5641897A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11647179A JPS5641897A (en) 1979-09-11 1979-09-11 Liquid-phase epitaxially-growing apparatus for oxide single crystal thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11647179A JPS5641897A (en) 1979-09-11 1979-09-11 Liquid-phase epitaxially-growing apparatus for oxide single crystal thin film

Publications (1)

Publication Number Publication Date
JPS5641897A true JPS5641897A (en) 1981-04-18

Family

ID=14687918

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11647179A Pending JPS5641897A (en) 1979-09-11 1979-09-11 Liquid-phase epitaxially-growing apparatus for oxide single crystal thin film

Country Status (1)

Country Link
JP (1) JPS5641897A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49123500A (en) * 1973-04-02 1974-11-26
JPS549169A (en) * 1977-06-24 1979-01-23 Toshiba Corp Method of producing single crystal

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49123500A (en) * 1973-04-02 1974-11-26
JPS549169A (en) * 1977-06-24 1979-01-23 Toshiba Corp Method of producing single crystal

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