JPS5641182B1 - - Google Patents

Info

Publication number
JPS5641182B1
JPS5641182B1 JP1895971A JP1895971A JPS5641182B1 JP S5641182 B1 JPS5641182 B1 JP S5641182B1 JP 1895971 A JP1895971 A JP 1895971A JP 1895971 A JP1895971 A JP 1895971A JP S5641182 B1 JPS5641182 B1 JP S5641182B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1895971A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP45094482A priority Critical patent/JPS5036955B1/ja
Priority claimed from JP7118228A external-priority patent/JPS5341513B2/ja
Application filed filed Critical
Priority to JP1895971A priority patent/JPS5641182B1/ja
Priority to DE19717139683U priority patent/DE7139683U/de
Priority to DE2152225A priority patent/DE2152225C3/de
Priority to FR7138633A priority patent/FR2111866B1/fr
Priority to DE19722214305 priority patent/DE2214305A1/de
Priority to US396223A priority patent/US3878549A/en
Publication of JPS5641182B1 publication Critical patent/JPS5641182B1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/683—Floating-gate IGFETs having only two programming levels programmed by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6316—Formation by nitridation, e.g. nitridation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Non-Volatile Memory (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
JP1895971A 1970-10-27 1971-03-30 Pending JPS5641182B1 (enExample)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP45094482A JPS5036955B1 (enExample) 1970-10-27 1970-10-27
JP1895971A JPS5641182B1 (enExample) 1970-10-27 1971-03-30
DE19717139683U DE7139683U (de) 1970-10-27 1971-10-20 Halbleiteranordnung
DE2152225A DE2152225C3 (de) 1970-10-27 1971-10-20 MHISFET mit mindestens zwei zwischen Gate-Elektrode und Kanal angeordneten Isolierschichten, und Verfahren zu seiner Herstellung
FR7138633A FR2111866B1 (enExample) 1970-10-27 1971-10-27
DE19722214305 DE2214305A1 (de) 1970-10-27 1972-03-24 Verfahren zur Herstellung einer insbesondere für Speicherzwecke geeigneten Halbleitervorrichtung
US396223A US3878549A (en) 1970-10-27 1973-09-11 Semiconductor memories

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP45094482A JPS5036955B1 (enExample) 1970-10-27 1970-10-27
JP7118228A JPS5341513B2 (enExample) 1971-03-26 1971-03-26
JP1895971A JPS5641182B1 (enExample) 1970-10-27 1971-03-30

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2350780A Division JPS5726469A (en) 1980-02-27 1980-02-27 Semiconductor memory device
JP9826880A Division JPS5726470A (en) 1980-07-18 1980-07-18 Semiconductor memory device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS5641182B1 true JPS5641182B1 (enExample) 1981-09-26

Family

ID=33101866

Family Applications (2)

Application Number Title Priority Date Filing Date
JP45094482A Pending JPS5036955B1 (enExample) 1970-10-27 1970-10-27
JP1895971A Pending JPS5641182B1 (enExample) 1970-10-27 1971-03-30

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP45094482A Pending JPS5036955B1 (enExample) 1970-10-27 1970-10-27

Country Status (2)

Country Link
JP (2) JPS5036955B1 (enExample)
DE (2) DE2152225C3 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5228200U (enExample) * 1975-08-16 1977-02-26
JP3613594B2 (ja) * 1993-08-19 2005-01-26 株式会社ルネサステクノロジ 半導体素子およびこれを用いた半導体記憶装置
US5508543A (en) * 1994-04-29 1996-04-16 International Business Machines Corporation Low voltage memory
DE19726085A1 (de) * 1997-06-19 1998-12-24 Siemens Ag Nichtflüchtige Speicherzelle
US7402850B2 (en) 2005-06-21 2008-07-22 Micron Technology, Inc. Back-side trapped non-volatile memory device
US7829938B2 (en) 2005-07-14 2010-11-09 Micron Technology, Inc. High density NAND non-volatile memory device
KR102767720B1 (ko) * 2016-12-01 2025-02-17 솔브레인 주식회사 화학적 기계적 연마를 위한 통합형 슬러리 조성물 및 이를 이용한 연마 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4922356A (enExample) * 1972-06-23 1974-02-27
JPS5036955A (enExample) * 1973-08-09 1975-04-07
JPS5120872A (en) * 1974-08-13 1976-02-19 Tokyo Gas Co Ltd Ichodenaiondobunpu nyoru gosa o hoshosuru henisokuteiho

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4922356A (enExample) * 1972-06-23 1974-02-27
JPS5036955A (enExample) * 1973-08-09 1975-04-07
JPS5120872A (en) * 1974-08-13 1976-02-19 Tokyo Gas Co Ltd Ichodenaiondobunpu nyoru gosa o hoshosuru henisokuteiho

Also Published As

Publication number Publication date
DE2214305A1 (de) 1972-10-05
DE2152225C3 (de) 1979-07-19
DE2152225A1 (de) 1972-05-10
DE2152225B2 (de) 1978-11-09
JPS5036955B1 (enExample) 1975-11-28

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