JPS5638069B2 - - Google Patents
Info
- Publication number
- JPS5638069B2 JPS5638069B2 JP6324276A JP6324276A JPS5638069B2 JP S5638069 B2 JPS5638069 B2 JP S5638069B2 JP 6324276 A JP6324276 A JP 6324276A JP 6324276 A JP6324276 A JP 6324276A JP S5638069 B2 JPS5638069 B2 JP S5638069B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/131—Thyristors having built-in components
- H10D84/135—Thyristors having built-in components the built-in components being diodes
- H10D84/136—Thyristors having built-in components the built-in components being diodes in anti-parallel configurations, e.g. reverse current thyristor [RCT]
Landscapes
- Thyristors (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6324276A JPS52146570A (en) | 1976-05-31 | 1976-05-31 | Reverse conducting thyristor |
| US06/070,655 US4296427A (en) | 1976-05-31 | 1979-08-28 | Reverse conducting amplified gate thyristor with plate-like separator section |
| US06/089,102 US4357621A (en) | 1976-05-31 | 1979-10-29 | Reverse conducting thyristor with specific resistor structures between main cathode and amplifying, reverse conducting portions |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6324276A JPS52146570A (en) | 1976-05-31 | 1976-05-31 | Reverse conducting thyristor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS52146570A JPS52146570A (en) | 1977-12-06 |
| JPS5638069B2 true JPS5638069B2 (enFirst) | 1981-09-03 |
Family
ID=13223553
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6324276A Granted JPS52146570A (en) | 1976-05-31 | 1976-05-31 | Reverse conducting thyristor |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US4296427A (enFirst) |
| JP (1) | JPS52146570A (enFirst) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4357621A (en) * | 1976-05-31 | 1982-11-02 | Tokyo Shibaura Electric Co., Ltd. | Reverse conducting thyristor with specific resistor structures between main cathode and amplifying, reverse conducting portions |
| JPS54183286U (enFirst) * | 1978-06-15 | 1979-12-26 | ||
| CH668505A5 (de) * | 1985-03-20 | 1988-12-30 | Bbc Brown Boveri & Cie | Halbleiterbauelement. |
| JPS62145868A (ja) * | 1985-12-20 | 1987-06-29 | Meidensha Electric Mfg Co Ltd | 逆導通形ゲ−トタ−ンオフサイリスタ |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE639633A (enFirst) * | 1962-11-07 | |||
| US3337783A (en) * | 1964-01-16 | 1967-08-22 | Westinghouse Electric Corp | Shorted emitter controlled rectifier with improved turn-off gain |
| GB1112301A (en) * | 1964-07-27 | 1968-05-01 | Gen Electric | Controlled rectifier with improved turn-on and turn-off characteristics |
| FR1483998A (enFirst) * | 1965-05-14 | 1967-09-13 | ||
| GB1053937A (enFirst) * | 1965-07-23 | 1900-01-01 | ||
| US3549961A (en) * | 1968-06-19 | 1970-12-22 | Int Rectifier Corp | Triac structure and method of manufacture |
| US3827073A (en) * | 1969-05-01 | 1974-07-30 | Texas Instruments Inc | Gated bilateral switching semiconductor device |
| US3978514A (en) * | 1969-07-18 | 1976-08-31 | Hitachi, Ltd. | Diode-integrated high speed thyristor |
| US3731162A (en) * | 1969-09-25 | 1973-05-01 | Tokyo Shibaura Electric Co | Semiconductor switching device |
| BE758745A (fr) * | 1969-11-10 | 1971-05-10 | Westinghouse Electric Corp | Perfectionnements aux ou en rapport avec les dispositifs semiconducteurs |
| DE2146178C3 (de) * | 1971-09-15 | 1979-09-27 | Brown, Boveri & Cie Ag, 6800 Mannheim | Thyristor mit Steuerstromverstärkung |
| DE2157091C3 (de) * | 1971-11-17 | 1979-02-01 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Thyristor mit integrierter Diode |
| DE2214187C3 (de) * | 1972-03-23 | 1978-05-03 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Thyristor |
| DE2261666A1 (de) * | 1972-12-16 | 1974-06-20 | Semikron Gleichrichterbau | Zweirichtungs-thyristor |
| DE2300754A1 (de) * | 1973-01-08 | 1974-07-11 | Siemens Ag | Thyristor |
| JPS5342234B2 (enFirst) * | 1973-02-12 | 1978-11-09 | ||
| US4028721A (en) * | 1973-08-01 | 1977-06-07 | Hitachi, Ltd. | Semiconductor controlled rectifier device |
| US3893153A (en) * | 1974-01-10 | 1975-07-01 | Westinghouse Electric Corp | Light activated thyristor with high di/dt capability |
| US4031607A (en) * | 1974-05-28 | 1977-06-28 | General Electric Company | Minority carrier isolation barriers for semiconductor devices |
-
1976
- 1976-05-31 JP JP6324276A patent/JPS52146570A/ja active Granted
-
1979
- 1979-08-28 US US06/070,655 patent/US4296427A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS52146570A (en) | 1977-12-06 |
| US4296427A (en) | 1981-10-20 |