JPS5637623A - Method for impurity diffusion - Google Patents
Method for impurity diffusionInfo
- Publication number
- JPS5637623A JPS5637623A JP11373979A JP11373979A JPS5637623A JP S5637623 A JPS5637623 A JP S5637623A JP 11373979 A JP11373979 A JP 11373979A JP 11373979 A JP11373979 A JP 11373979A JP S5637623 A JPS5637623 A JP S5637623A
- Authority
- JP
- Japan
- Prior art keywords
- diffusion
- ampoule
- temperature
- impurity
- soaking
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11373979A JPS5637623A (en) | 1979-09-04 | 1979-09-04 | Method for impurity diffusion |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11373979A JPS5637623A (en) | 1979-09-04 | 1979-09-04 | Method for impurity diffusion |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5637623A true JPS5637623A (en) | 1981-04-11 |
| JPS6127895B2 JPS6127895B2 (enExample) | 1986-06-27 |
Family
ID=14619899
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11373979A Granted JPS5637623A (en) | 1979-09-04 | 1979-09-04 | Method for impurity diffusion |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5637623A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5506186A (en) * | 1988-06-27 | 1996-04-09 | U.S. Philips Corporation | Method of manufacturing an optoelectronic device |
-
1979
- 1979-09-04 JP JP11373979A patent/JPS5637623A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5506186A (en) * | 1988-06-27 | 1996-04-09 | U.S. Philips Corporation | Method of manufacturing an optoelectronic device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6127895B2 (enExample) | 1986-06-27 |
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