JPS5637623A - Method for impurity diffusion - Google Patents

Method for impurity diffusion

Info

Publication number
JPS5637623A
JPS5637623A JP11373979A JP11373979A JPS5637623A JP S5637623 A JPS5637623 A JP S5637623A JP 11373979 A JP11373979 A JP 11373979A JP 11373979 A JP11373979 A JP 11373979A JP S5637623 A JPS5637623 A JP S5637623A
Authority
JP
Japan
Prior art keywords
diffusion
ampoule
temperature
impurity
soaking
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11373979A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6127895B2 (enExample
Inventor
Takashi Sugino
Masaru Wada
Yuichi Shimizu
Kunio Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP11373979A priority Critical patent/JPS5637623A/ja
Publication of JPS5637623A publication Critical patent/JPS5637623A/ja
Publication of JPS6127895B2 publication Critical patent/JPS6127895B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/12—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material

Landscapes

  • Semiconductor Lasers (AREA)
JP11373979A 1979-09-04 1979-09-04 Method for impurity diffusion Granted JPS5637623A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11373979A JPS5637623A (en) 1979-09-04 1979-09-04 Method for impurity diffusion

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11373979A JPS5637623A (en) 1979-09-04 1979-09-04 Method for impurity diffusion

Publications (2)

Publication Number Publication Date
JPS5637623A true JPS5637623A (en) 1981-04-11
JPS6127895B2 JPS6127895B2 (enExample) 1986-06-27

Family

ID=14619899

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11373979A Granted JPS5637623A (en) 1979-09-04 1979-09-04 Method for impurity diffusion

Country Status (1)

Country Link
JP (1) JPS5637623A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5506186A (en) * 1988-06-27 1996-04-09 U.S. Philips Corporation Method of manufacturing an optoelectronic device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5506186A (en) * 1988-06-27 1996-04-09 U.S. Philips Corporation Method of manufacturing an optoelectronic device

Also Published As

Publication number Publication date
JPS6127895B2 (enExample) 1986-06-27

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