JPS563675B2 - - Google Patents
Info
- Publication number
- JPS563675B2 JPS563675B2 JP9024073A JP9024073A JPS563675B2 JP S563675 B2 JPS563675 B2 JP S563675B2 JP 9024073 A JP9024073 A JP 9024073A JP 9024073 A JP9024073 A JP 9024073A JP S563675 B2 JPS563675 B2 JP S563675B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/149—Source or drain regions of field-effect devices
- H10D62/151—Source or drain regions of field-effect devices of IGFETs
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G1/00—Details of arrangements for controlling amplification
- H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
- H03G1/0035—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements
- H03G1/007—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements using field-effect transistors [FET]
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H11/00—Networks using active elements
- H03H11/02—Multiple-port networks
- H03H11/24—Frequency-independent attenuators
- H03H11/245—Frequency-independent attenuators using field-effect transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9024073A JPS563675B2 (en, 2012) | 1973-08-11 | 1973-08-11 | |
| GB35035/74A GB1481724A (en) | 1973-08-11 | 1974-08-08 | Field effect transistors |
| CA206,672A CA1016665A (en) | 1973-08-11 | 1974-08-09 | Field effect transistor |
| IT26229/74A IT1019875B (it) | 1973-08-11 | 1974-08-09 | Transistore ad effetto di campo presentante uno scarico resistivo e circuito per lo stesso |
| DE2438693A DE2438693A1 (de) | 1973-08-11 | 1974-08-12 | Feldeffekt-transistor |
| FR7427930A FR2240531B1 (en, 2012) | 1973-08-11 | 1974-08-12 | |
| NL7410799A NL7410799A (nl) | 1973-08-11 | 1974-08-12 | Veldeffecttransistor met een resistieve afvoer. |
| US05/845,712 US4141023A (en) | 1973-08-11 | 1977-10-26 | Field effect transistor having a linear attenuation characteristic and an improved distortion factor with multiple gate drain contacts |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9024073A JPS563675B2 (en, 2012) | 1973-08-11 | 1973-08-11 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5039878A JPS5039878A (en, 2012) | 1975-04-12 |
| JPS563675B2 true JPS563675B2 (en, 2012) | 1981-01-26 |
Family
ID=13992957
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9024073A Expired JPS563675B2 (en, 2012) | 1973-08-11 | 1973-08-11 |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS563675B2 (en, 2012) |
| CA (1) | CA1016665A (en, 2012) |
| DE (1) | DE2438693A1 (en, 2012) |
| FR (1) | FR2240531B1 (en, 2012) |
| GB (1) | GB1481724A (en, 2012) |
| IT (1) | IT1019875B (en, 2012) |
| NL (1) | NL7410799A (en, 2012) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5230183A (en) * | 1975-09-02 | 1977-03-07 | Matsushita Electric Ind Co Ltd | Mos semiconductor device and process for producing it |
| GB1546672A (en) * | 1975-07-03 | 1979-05-31 | Sony Corp | Signal compression and expansion circuits |
| NL7606483A (nl) * | 1976-06-16 | 1977-12-20 | Philips Nv | Inrichting voor het mengen van signalen. |
| JPS5396768A (en) * | 1977-02-04 | 1978-08-24 | Nippon Telegr & Teleph Corp <Ntt> | High resistance gate mis semiconductor |
-
1973
- 1973-08-11 JP JP9024073A patent/JPS563675B2/ja not_active Expired
-
1974
- 1974-08-08 GB GB35035/74A patent/GB1481724A/en not_active Expired
- 1974-08-09 IT IT26229/74A patent/IT1019875B/it active
- 1974-08-09 CA CA206,672A patent/CA1016665A/en not_active Expired
- 1974-08-12 FR FR7427930A patent/FR2240531B1/fr not_active Expired
- 1974-08-12 NL NL7410799A patent/NL7410799A/xx not_active Application Discontinuation
- 1974-08-12 DE DE2438693A patent/DE2438693A1/de not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| CA1016665A (en) | 1977-08-30 |
| JPS5039878A (en, 2012) | 1975-04-12 |
| NL7410799A (nl) | 1975-02-13 |
| DE2438693A1 (de) | 1975-02-20 |
| FR2240531A1 (en, 2012) | 1975-03-07 |
| IT1019875B (it) | 1977-11-30 |
| FR2240531B1 (en, 2012) | 1979-08-03 |
| GB1481724A (en) | 1977-08-03 |