JPS5634106B2 - - Google Patents
Info
- Publication number
- JPS5634106B2 JPS5634106B2 JP11304175A JP11304175A JPS5634106B2 JP S5634106 B2 JPS5634106 B2 JP S5634106B2 JP 11304175 A JP11304175 A JP 11304175A JP 11304175 A JP11304175 A JP 11304175A JP S5634106 B2 JPS5634106 B2 JP S5634106B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/68—Floating-gate IGFETs
- H10D30/681—Floating-gate IGFETs having only two programming levels
Landscapes
- Non-Volatile Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50113041A JPS5236475A (en) | 1975-09-17 | 1975-09-17 | Non-volatile semiconductor memory |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50113041A JPS5236475A (en) | 1975-09-17 | 1975-09-17 | Non-volatile semiconductor memory |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5236475A JPS5236475A (en) | 1977-03-19 |
| JPS5634106B2 true JPS5634106B2 (forum.php) | 1981-08-07 |
Family
ID=14601975
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50113041A Granted JPS5236475A (en) | 1975-09-17 | 1975-09-17 | Non-volatile semiconductor memory |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5236475A (forum.php) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58203697A (ja) * | 1982-05-20 | 1983-11-28 | Toshiba Corp | 半導体記憶装置 |
| US4616245A (en) * | 1984-10-29 | 1986-10-07 | Ncr Corporation | Direct-write silicon nitride EEPROM cell |
| JP2846822B2 (ja) * | 1994-11-28 | 1999-01-13 | モトローラ株式会社 | ２層フローティングゲート構造のマルチビット対応セルを有する不揮発性メモリ及びそのプログラム方法 |
-
1975
- 1975-09-17 JP JP50113041A patent/JPS5236475A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5236475A (en) | 1977-03-19 |