JPS5633852B2 - - Google Patents
Info
- Publication number
- JPS5633852B2 JPS5633852B2 JP7003276A JP7003276A JPS5633852B2 JP S5633852 B2 JPS5633852 B2 JP S5633852B2 JP 7003276 A JP7003276 A JP 7003276A JP 7003276 A JP7003276 A JP 7003276A JP S5633852 B2 JPS5633852 B2 JP S5633852B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Led Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7003276A JPS52152164A (en) | 1976-06-14 | 1976-06-14 | Epitaxial wafer of group iii-v compound |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7003276A JPS52152164A (en) | 1976-06-14 | 1976-06-14 | Epitaxial wafer of group iii-v compound |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS52152164A JPS52152164A (en) | 1977-12-17 |
| JPS5633852B2 true JPS5633852B2 (enExample) | 1981-08-06 |
Family
ID=13419836
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7003276A Granted JPS52152164A (en) | 1976-06-14 | 1976-06-14 | Epitaxial wafer of group iii-v compound |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS52152164A (enExample) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6182618A (ja) * | 1984-08-31 | 1986-04-26 | 株式会社山武 | リ−フスイツチ |
| JPS6182621A (ja) * | 1984-08-31 | 1986-04-26 | 株式会社山武 | リ−フスイツチ |
| JPS6182620A (ja) * | 1984-08-31 | 1986-04-26 | 株式会社山武 | リ−フスイツチ |
| JPS6182622A (ja) * | 1984-08-31 | 1986-04-26 | 株式会社山武 | リ−フスイツチ |
| JPS6182623A (ja) * | 1984-08-31 | 1986-04-26 | 株式会社山武 | リ−フスイツチ |
| JPS6182617A (ja) * | 1984-08-31 | 1986-04-26 | 株式会社山武 | リ−フスイツチ |
| JPS61104935U (enExample) * | 1984-12-14 | 1986-07-03 | ||
| JPS62175625U (enExample) * | 1986-04-26 | 1987-11-07 | ||
| JPH0682734U (ja) * | 1990-12-29 | 1994-11-25 | 山武ハネウエル株式会社 | リーフスイッチ |
| JPH0682733U (ja) * | 1990-12-29 | 1994-11-25 | 山武ハネウエル株式会社 | リーフスイッチ |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56105625A (en) * | 1980-01-26 | 1981-08-22 | Sumitomo Electric Ind Ltd | Manufacture of compound semiconductor thin film single crystal of high ratio resistance and low transition density |
| JPH05110137A (ja) * | 1991-10-15 | 1993-04-30 | Shin Etsu Handotai Co Ltd | ＧａＰ赤色発光素子 |
-
1976
- 1976-06-14 JP JP7003276A patent/JPS52152164A/ja active Granted
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6182618A (ja) * | 1984-08-31 | 1986-04-26 | 株式会社山武 | リ−フスイツチ |
| JPS6182621A (ja) * | 1984-08-31 | 1986-04-26 | 株式会社山武 | リ−フスイツチ |
| JPS6182620A (ja) * | 1984-08-31 | 1986-04-26 | 株式会社山武 | リ−フスイツチ |
| JPS6182622A (ja) * | 1984-08-31 | 1986-04-26 | 株式会社山武 | リ−フスイツチ |
| JPS6182623A (ja) * | 1984-08-31 | 1986-04-26 | 株式会社山武 | リ−フスイツチ |
| JPS6182617A (ja) * | 1984-08-31 | 1986-04-26 | 株式会社山武 | リ−フスイツチ |
| JPS61104935U (enExample) * | 1984-12-14 | 1986-07-03 | ||
| JPS62175625U (enExample) * | 1986-04-26 | 1987-11-07 | ||
| JPH0682734U (ja) * | 1990-12-29 | 1994-11-25 | 山武ハネウエル株式会社 | リーフスイッチ |
| JPH0682733U (ja) * | 1990-12-29 | 1994-11-25 | 山武ハネウエル株式会社 | リーフスイッチ |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS52152164A (en) | 1977-12-17 |