JPS5633835A - Holding mechanism for plate shaped substance - Google Patents

Holding mechanism for plate shaped substance

Info

Publication number
JPS5633835A
JPS5633835A JP10916079A JP10916079A JPS5633835A JP S5633835 A JPS5633835 A JP S5633835A JP 10916079 A JP10916079 A JP 10916079A JP 10916079 A JP10916079 A JP 10916079A JP S5633835 A JPS5633835 A JP S5633835A
Authority
JP
Japan
Prior art keywords
holding
substance
section
plate shaped
vacuum attraction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10916079A
Other languages
Japanese (ja)
Inventor
Masaru Tsukahara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10916079A priority Critical patent/JPS5633835A/en
Publication of JPS5633835A publication Critical patent/JPS5633835A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3046Mechanical treatment, e.g. grinding, polishing, cutting using blasting, e.g. sand-blasting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

PURPOSE:To obtain the holding mechanism with easy maintenance and control by holding a plate shaped fringe section to a flat holding surface by vacuum attraction wherein positioning is made for the surrounding face of the plate shaped substance by a guide set out to the holding substance and the grinding dimension accuracy of a wafer will be raised. CONSTITUTION:The fringe surface section of the plate shaped substance 7 is held to the flat holding surface 5 of a holding substance 1 by vacuum attraction and positioning is also made to the surrounding surface of the plate shaped substance 7 by a guide 3 set out to the holding substance 1. For example, a ring groove 2 is provided around the holding surface 5 of the holding substance 1 and a retainer 3 having a rectineal rotation-proof section 11 at an inner circumference section is set out in the groove 2. Small holes 9 for vacuum attraction are provided at the fringe section of the round shaped holding surface section 5 faced to the inside of the groove 2 and the holes 9 for vacuum attraction are connected to a vacuum pump through a guide hole 10 provided in the holding substance 1. In this way, the wafer 1 is directly held to the flat holding surface 5. Therefore, grinding dimension accuracy will be raised and maintenance and control of a holding mechanism will also be facilitated.
JP10916079A 1979-08-29 1979-08-29 Holding mechanism for plate shaped substance Pending JPS5633835A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10916079A JPS5633835A (en) 1979-08-29 1979-08-29 Holding mechanism for plate shaped substance

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10916079A JPS5633835A (en) 1979-08-29 1979-08-29 Holding mechanism for plate shaped substance

Publications (1)

Publication Number Publication Date
JPS5633835A true JPS5633835A (en) 1981-04-04

Family

ID=14503155

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10916079A Pending JPS5633835A (en) 1979-08-29 1979-08-29 Holding mechanism for plate shaped substance

Country Status (1)

Country Link
JP (1) JPS5633835A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4753049A (en) * 1984-01-23 1988-06-28 Disco Abrasive Systems, Ltd. Method and apparatus for grinding the surface of a semiconductor
JPS6447035U (en) * 1987-09-16 1989-03-23
SG153746A1 (en) * 2007-12-21 2009-07-29 Tokyo Seimitsu Co Ltd Wafer grinding machine and wafer grinding method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4753049A (en) * 1984-01-23 1988-06-28 Disco Abrasive Systems, Ltd. Method and apparatus for grinding the surface of a semiconductor
JPS6447035U (en) * 1987-09-16 1989-03-23
SG153746A1 (en) * 2007-12-21 2009-07-29 Tokyo Seimitsu Co Ltd Wafer grinding machine and wafer grinding method
US8206198B2 (en) 2007-12-21 2012-06-26 Tokyo Seimitsu Co., Ltd. Wafer grinding machine and wafer grinding method

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