JPS5633832A - Electron exposure device - Google Patents

Electron exposure device

Info

Publication number
JPS5633832A
JPS5633832A JP10990079A JP10990079A JPS5633832A JP S5633832 A JPS5633832 A JP S5633832A JP 10990079 A JP10990079 A JP 10990079A JP 10990079 A JP10990079 A JP 10990079A JP S5633832 A JPS5633832 A JP S5633832A
Authority
JP
Japan
Prior art keywords
exposure
speed
sampling table
axis direction
moving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10990079A
Other languages
Japanese (ja)
Inventor
Takeari Uema
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10990079A priority Critical patent/JPS5633832A/en
Publication of JPS5633832A publication Critical patent/JPS5633832A/en
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To permit increase in send speed of a sample at low exposure density part by providing a speed adjusting means calculating a stage transit speed which is inversely proportional to exposure density. CONSTITUTION:An exposure sample 3 is provided on a sampling table 4. The sampling table 4 is continuously moved in an X-axis direction by a driving section 6 for moving the sampling table 4 and an objective section for exposure is exposed by a vector scan system while an electron beam is moved in a Y-axis direction within exposure width 31. When the electron beam reaches the end of the exposure sample by moving the sampling table in the X-axis direction, the sampling table 4 moves in the Y-axis direction by the exposure width 31. The driving speed of a driving section 6 in the X-axis direction is calculated by a speed adjusting means 8 based on the exposure data given by a calculator 9 for control. And the drive of the sampling table 4 is performed through a driving means 7 based on the calculated speed. Therefore, an exposure speed will be increased by moving the sampling table at a speed which is inversely proportional to the exposure density.
JP10990079A 1979-08-29 1979-08-29 Electron exposure device Pending JPS5633832A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10990079A JPS5633832A (en) 1979-08-29 1979-08-29 Electron exposure device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10990079A JPS5633832A (en) 1979-08-29 1979-08-29 Electron exposure device

Publications (1)

Publication Number Publication Date
JPS5633832A true JPS5633832A (en) 1981-04-04

Family

ID=14521998

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10990079A Pending JPS5633832A (en) 1979-08-29 1979-08-29 Electron exposure device

Country Status (1)

Country Link
JP (1) JPS5633832A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56144537A (en) * 1980-04-11 1981-11-10 Toshiba Corp Patterning device using electron beam
DE3331592A1 (en) 1982-09-01 1984-03-01 Fuji Photo Film Co., Ltd., Minamiashigara, Kanagawa DISAZO CONNECTIONS AND PHOTO-CONDUCTIVE COMPOSITIONS CONTAINING THEM AND ELECTROPHOTOGRAPHIC LIGHT-SENSITIVE RECORDING MATERIALS
US4843563A (en) * 1985-03-25 1989-06-27 Canon Kabushiki Kaisha Step-and-repeat alignment and exposure method and apparatus
JPH01205421A (en) * 1988-02-10 1989-08-17 Fujitsu Ltd Electron beam exposure method
US5050196A (en) * 1987-02-26 1991-09-17 Canon Kabushiki Kaisha Radiation gauge

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5359374A (en) * 1976-11-09 1978-05-29 Fujitsu Ltd Electron beam exposure unit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5359374A (en) * 1976-11-09 1978-05-29 Fujitsu Ltd Electron beam exposure unit

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56144537A (en) * 1980-04-11 1981-11-10 Toshiba Corp Patterning device using electron beam
JPS6317223B2 (en) * 1980-04-11 1988-04-13 Tokyo Shibaura Electric Co
DE3331592A1 (en) 1982-09-01 1984-03-01 Fuji Photo Film Co., Ltd., Minamiashigara, Kanagawa DISAZO CONNECTIONS AND PHOTO-CONDUCTIVE COMPOSITIONS CONTAINING THEM AND ELECTROPHOTOGRAPHIC LIGHT-SENSITIVE RECORDING MATERIALS
US4843563A (en) * 1985-03-25 1989-06-27 Canon Kabushiki Kaisha Step-and-repeat alignment and exposure method and apparatus
US4910679A (en) * 1985-03-25 1990-03-20 Canon Kabushiki Kaisha Step-and-repeat alignment and exposure method and apparatus
US5050196A (en) * 1987-02-26 1991-09-17 Canon Kabushiki Kaisha Radiation gauge
JPH01205421A (en) * 1988-02-10 1989-08-17 Fujitsu Ltd Electron beam exposure method

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