JPS5630640A - Detecting method of chemical substance by chemically sensitive element of insulated-gate transistor structure - Google Patents

Detecting method of chemical substance by chemically sensitive element of insulated-gate transistor structure

Info

Publication number
JPS5630640A
JPS5630640A JP10596279A JP10596279A JPS5630640A JP S5630640 A JPS5630640 A JP S5630640A JP 10596279 A JP10596279 A JP 10596279A JP 10596279 A JP10596279 A JP 10596279A JP S5630640 A JPS5630640 A JP S5630640A
Authority
JP
Japan
Prior art keywords
bias voltage
reference electrode
insulated
gate transistor
transistor structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10596279A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6134619B2 (enrdf_load_stackoverflow
Inventor
Kiyozo Koshiishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Olympus Corp
Original Assignee
Olympus Optical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Olympus Optical Co Ltd filed Critical Olympus Optical Co Ltd
Priority to JP10596279A priority Critical patent/JPS5630640A/ja
Publication of JPS5630640A publication Critical patent/JPS5630640A/ja
Publication of JPS6134619B2 publication Critical patent/JPS6134619B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
JP10596279A 1979-08-22 1979-08-22 Detecting method of chemical substance by chemically sensitive element of insulated-gate transistor structure Granted JPS5630640A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10596279A JPS5630640A (en) 1979-08-22 1979-08-22 Detecting method of chemical substance by chemically sensitive element of insulated-gate transistor structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10596279A JPS5630640A (en) 1979-08-22 1979-08-22 Detecting method of chemical substance by chemically sensitive element of insulated-gate transistor structure

Publications (2)

Publication Number Publication Date
JPS5630640A true JPS5630640A (en) 1981-03-27
JPS6134619B2 JPS6134619B2 (enrdf_load_stackoverflow) 1986-08-08

Family

ID=14421415

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10596279A Granted JPS5630640A (en) 1979-08-22 1979-08-22 Detecting method of chemical substance by chemically sensitive element of insulated-gate transistor structure

Country Status (1)

Country Link
JP (1) JPS5630640A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6039547A (ja) * 1983-08-12 1985-03-01 Mitsubishi Electric Corp マルチ酵素センサ
JPS60120240A (ja) * 1983-12-03 1985-06-27 Horiba Ltd Ｉｓｆｅｔセンサ
US5466616A (en) * 1994-04-06 1995-11-14 United Microelectronics Corp. Method of producing an LDMOS transistor having reduced dimensions, reduced leakage, and a reduced propensity to latch-up

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6039547A (ja) * 1983-08-12 1985-03-01 Mitsubishi Electric Corp マルチ酵素センサ
JPS60120240A (ja) * 1983-12-03 1985-06-27 Horiba Ltd Ｉｓｆｅｔセンサ
US5466616A (en) * 1994-04-06 1995-11-14 United Microelectronics Corp. Method of producing an LDMOS transistor having reduced dimensions, reduced leakage, and a reduced propensity to latch-up

Also Published As

Publication number Publication date
JPS6134619B2 (enrdf_load_stackoverflow) 1986-08-08

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