JPS5626799A - Beltlike silicon crystal growing apparatus - Google Patents
Beltlike silicon crystal growing apparatusInfo
- Publication number
- JPS5626799A JPS5626799A JP10181079A JP10181079A JPS5626799A JP S5626799 A JPS5626799 A JP S5626799A JP 10181079 A JP10181079 A JP 10181079A JP 10181079 A JP10181079 A JP 10181079A JP S5626799 A JPS5626799 A JP S5626799A
- Authority
- JP
- Japan
- Prior art keywords
- dies
- silicon crystal
- beltlike
- length
- growing apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE: To obtain a beltlike silicon crystal of high quality and high purity by placing platelike main heaters having a specified length in the longer side direction in parallel with and opposite to each other outside support rods which linearly support plural pairs of dies.
CONSTITUTION: Plural pairs of dies 43a1, 43a2, etc. having slits are arranged at the opening of a crucible holding a silicon melt, and this beltlike silicon crystal growing apparatus is provided with support rods 46a, 46b which linearly support the dies to adjust the distance between the dies to die width W or more. Platelike main heaters 45a, 45b are placed opposite to each other and in parallel with rods 46a, 46b, and length m of each heater 45a, 45b in the longer side direction is made 1.25W2 to length l between the outermost dies. Thus, the silicon melt does not stick to the dies during growing, and a high purity beltlike silicon crystal is obtd. inexpensively.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10181079A JPS5626799A (en) | 1979-08-11 | 1979-08-11 | Beltlike silicon crystal growing apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10181079A JPS5626799A (en) | 1979-08-11 | 1979-08-11 | Beltlike silicon crystal growing apparatus |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5626799A true JPS5626799A (en) | 1981-03-14 |
JPS5719078B2 JPS5719078B2 (en) | 1982-04-20 |
Family
ID=14310481
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10181079A Granted JPS5626799A (en) | 1979-08-11 | 1979-08-11 | Beltlike silicon crystal growing apparatus |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5626799A (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6991389B2 (en) * | 2019-03-08 | 2022-01-12 | 住友精化株式会社 | Water-absorbent resin particles and their manufacturing method |
-
1979
- 1979-08-11 JP JP10181079A patent/JPS5626799A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5719078B2 (en) | 1982-04-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3068008D1 (en) | Process for the characterization of the oxygen content of silicon rods drawn by the czochralski method | |
AU5958980A (en) | Pulling monocrystalline silicon rods from a melt | |
IT1170715B (en) | PROCEDURE FOR PRODUCING PURE MONOCRYSTALS BY CRUCIBLE DRAFT ACCORDING TO CZOCHRALSKI | |
GB1485357A (en) | Apparatus for growing crystalline bodies from a melt | |
DE3377874D1 (en) | Method of growing silicon crystals by the czochralski method | |
YU39805B (en) | Process for producing crystalline silicon | |
DE2964185D1 (en) | Process for preparing p,p'-biphenol of high purity | |
GB2014871B (en) | Manufacture of silicon rods by the czochralski technique | |
GB2076385B (en) | Process for producing type silicon carbide | |
GB2190908B (en) | Process for growing silicon carbide whiskers by undercooling | |
JPS5626799A (en) | Beltlike silicon crystal growing apparatus | |
EP0252279A3 (en) | Process and apparatus for seperating silicon wafers, to be used for solar cells, from according to the horizontal ribbon pulling growth method prepared silicon ribbon | |
EP0095707A1 (en) | Process for making polycrystalline silicon ingots suitable for subsequent zone melting | |
JPS57118091A (en) | Manufacturing apparatus for beltlike silicon crystal | |
JPS55140800A (en) | Crucible for crystal growing crucible device | |
JPS56104799A (en) | Production of si single crystal and device therefor | |
JPS52149273A (en) | Production of plate-shaped crystal | |
JPS55140793A (en) | Single crystal pulling device | |
JPS5413477A (en) | Continuous growing apparatus for single crystal | |
JPS549173A (en) | Method of producing single crystal | |
GB2116871B (en) | Apparatus for growing single crystals from a melt using the czochralski method | |
JPS5413475A (en) | Preparation of single crystal | |
JPS57118092A (en) | Manufacturing apparatus for beltlike silicon crystal | |
JPS52120290A (en) | Production of gap single crystal | |
JPS57118090A (en) | Manufacturing apparatus for beltlike silicon crystal |