JPS5624924A - Manufacture of solid thin film by ion beam - Google Patents
Manufacture of solid thin film by ion beamInfo
- Publication number
- JPS5624924A JPS5624924A JP10018779A JP10018779A JPS5624924A JP S5624924 A JPS5624924 A JP S5624924A JP 10018779 A JP10018779 A JP 10018779A JP 10018779 A JP10018779 A JP 10018779A JP S5624924 A JPS5624924 A JP S5624924A
- Authority
- JP
- Japan
- Prior art keywords
- ions
- substrate
- generator
- ion
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H10P14/22—
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54100187A JPS594847B2 (ja) | 1979-08-08 | 1979-08-08 | イオンビ−ム固体膜製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54100187A JPS594847B2 (ja) | 1979-08-08 | 1979-08-08 | イオンビ−ム固体膜製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5624924A true JPS5624924A (en) | 1981-03-10 |
| JPS594847B2 JPS594847B2 (ja) | 1984-02-01 |
Family
ID=14267294
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP54100187A Expired JPS594847B2 (ja) | 1979-08-08 | 1979-08-08 | イオンビ−ム固体膜製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS594847B2 (ja) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5063883A (ja) * | 1973-10-08 | 1975-05-30 | ||
| JPS54971A (en) * | 1977-06-06 | 1979-01-06 | Nec Corp | Growing method of ion beam crystal |
| JPS544567A (en) * | 1977-06-13 | 1979-01-13 | Nec Corp | Growing apparatus of ion beam crystal |
-
1979
- 1979-08-08 JP JP54100187A patent/JPS594847B2/ja not_active Expired
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5063883A (ja) * | 1973-10-08 | 1975-05-30 | ||
| JPS54971A (en) * | 1977-06-06 | 1979-01-06 | Nec Corp | Growing method of ion beam crystal |
| JPS544567A (en) * | 1977-06-13 | 1979-01-13 | Nec Corp | Growing apparatus of ion beam crystal |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS594847B2 (ja) | 1984-02-01 |
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