JPS5622367B2 - - Google Patents
Info
- Publication number
- JPS5622367B2 JPS5622367B2 JP4364676A JP4364676A JPS5622367B2 JP S5622367 B2 JPS5622367 B2 JP S5622367B2 JP 4364676 A JP4364676 A JP 4364676A JP 4364676 A JP4364676 A JP 4364676A JP S5622367 B2 JPS5622367 B2 JP S5622367B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Drying Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4364676A JPS52127168A (en) | 1976-04-19 | 1976-04-19 | Etching unit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4364676A JPS52127168A (en) | 1976-04-19 | 1976-04-19 | Etching unit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS52127168A JPS52127168A (en) | 1977-10-25 |
JPS5622367B2 true JPS5622367B2 (enrdf_load_stackoverflow) | 1981-05-25 |
Family
ID=12669618
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4364676A Granted JPS52127168A (en) | 1976-04-19 | 1976-04-19 | Etching unit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52127168A (enrdf_load_stackoverflow) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6032972B2 (ja) * | 1977-12-09 | 1985-07-31 | 株式会社日立製作所 | エツチング装置 |
JPS5643727A (en) * | 1979-09-17 | 1981-04-22 | Mitsubishi Electric Corp | Pattern formation on film to be etched |
US4464223A (en) * | 1983-10-03 | 1984-08-07 | Tegal Corp. | Plasma reactor apparatus and method |
JPS60153129A (ja) * | 1984-01-20 | 1985-08-12 | Seiko Instr & Electronics Ltd | 半導体装置の製造方法 |
JP2799414B2 (ja) * | 1988-05-13 | 1998-09-17 | 株式会社半導体エネルギー研究所 | プラズマcvd装置および成膜方法 |
JP2639569B2 (ja) * | 1988-09-16 | 1997-08-13 | 株式会社半導体エネルギー研究所 | プラズマ反応方法およびプラズマ反応装置 |
US6127277A (en) * | 1996-07-03 | 2000-10-03 | Tegal Corporation | Method and apparatus for etching a semiconductor wafer with features having vertical sidewalls |
US6500314B1 (en) | 1996-07-03 | 2002-12-31 | Tegal Corporation | Plasma etch reactor and method |
CN1148789C (zh) | 1996-07-03 | 2004-05-05 | 泰格尔公司 | 腐蚀半导体晶片的方法和装置 |
US6048435A (en) * | 1996-07-03 | 2000-04-11 | Tegal Corporation | Plasma etch reactor and method for emerging films |
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1976
- 1976-04-19 JP JP4364676A patent/JPS52127168A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS52127168A (en) | 1977-10-25 |