JPS5619210A - Wave detecting circuit - Google Patents

Wave detecting circuit

Info

Publication number
JPS5619210A
JPS5619210A JP9628079A JP9628079A JPS5619210A JP S5619210 A JPS5619210 A JP S5619210A JP 9628079 A JP9628079 A JP 9628079A JP 9628079 A JP9628079 A JP 9628079A JP S5619210 A JPS5619210 A JP S5619210A
Authority
JP
Japan
Prior art keywords
diode
temperature
wave
resistance
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9628079A
Other languages
Japanese (ja)
Inventor
Yoshinori Uchida
Naoyuki Minami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9628079A priority Critical patent/JPS5619210A/en
Publication of JPS5619210A publication Critical patent/JPS5619210A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03DDEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D1/00Demodulation of amplitude-modulated oscillations
    • H03D1/08Demodulation of amplitude-modulated oscillations by means of non-linear two-pole elements
    • H03D1/10Demodulation of amplitude-modulated oscillations by means of non-linear two-pole elements of diodes

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:To keep the fixed wave detection gain by securing the same property between the wave detecting diode and the temperature detecting diode as well as between the load resistance and the feedback resistance and then securing the constant bias current of the wave detecting diode. CONSTITUTION:The same property is secured between wave and temperature detecting diodes 1 and 2 as well as between load and feedback resistances 14 and 24. Then the voltage generated at terminal 22 is applied to the serial circuit of diode 1 and resistance 14. And thus the voltage by which the current of a fixed value can be flowed regardless of the temperature is caused at diode 1 as long as the temperature of diode 2 is identical to that of diode 1. This voltage is applied to the serial circuit of diode 1 and resistance 14 via choke 15, and as a result the bias current of a fixed value flows at all times to diode 1 regardless of the temperature as long as diodes 1 and 2 are under the conditions of the same ambient temperature. Thus the fixed wave detection wave gain can be kept.
JP9628079A 1979-07-25 1979-07-25 Wave detecting circuit Pending JPS5619210A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9628079A JPS5619210A (en) 1979-07-25 1979-07-25 Wave detecting circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9628079A JPS5619210A (en) 1979-07-25 1979-07-25 Wave detecting circuit

Publications (1)

Publication Number Publication Date
JPS5619210A true JPS5619210A (en) 1981-02-23

Family

ID=14160700

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9628079A Pending JPS5619210A (en) 1979-07-25 1979-07-25 Wave detecting circuit

Country Status (1)

Country Link
JP (1) JPS5619210A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5899009A (en) * 1981-12-09 1983-06-13 Toshiba Corp Amplitude detector
JPS60264115A (en) * 1984-06-13 1985-12-27 Nec Corp Diode attenuator
JPS61118464A (en) * 1984-11-14 1986-06-05 Matsushita Electric Works Ltd Epoxy resin varnish for production of laminated board
JPS6410704A (en) * 1987-07-02 1989-01-13 Nec Corp High frequency detecting circuit

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5899009A (en) * 1981-12-09 1983-06-13 Toshiba Corp Amplitude detector
JPH043125B2 (en) * 1981-12-09 1992-01-22
JPS60264115A (en) * 1984-06-13 1985-12-27 Nec Corp Diode attenuator
JPH0257371B2 (en) * 1984-06-13 1990-12-04 Nippon Electric Co
JPS61118464A (en) * 1984-11-14 1986-06-05 Matsushita Electric Works Ltd Epoxy resin varnish for production of laminated board
JPS6410704A (en) * 1987-07-02 1989-01-13 Nec Corp High frequency detecting circuit

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