JPS5615071B2 - - Google Patents

Info

Publication number
JPS5615071B2
JPS5615071B2 JP14246875A JP14246875A JPS5615071B2 JP S5615071 B2 JPS5615071 B2 JP S5615071B2 JP 14246875 A JP14246875 A JP 14246875A JP 14246875 A JP14246875 A JP 14246875A JP S5615071 B2 JPS5615071 B2 JP S5615071B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP14246875A
Other languages
Japanese (ja)
Other versions
JPS5180731A (https=
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5180731A publication Critical patent/JPS5180731A/ja
Publication of JPS5615071B2 publication Critical patent/JPS5615071B2/ja
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H10D84/813—Combinations of field-effect devices and capacitor only

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Memory System (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
JP14246875A 1974-12-31 1975-12-02 Expired JPS5615071B2 (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US537796A US3916390A (en) 1974-12-31 1974-12-31 Dynamic memory with non-volatile back-up mode

Publications (2)

Publication Number Publication Date
JPS5180731A JPS5180731A (https=) 1976-07-14
JPS5615071B2 true JPS5615071B2 (https=) 1981-04-08

Family

ID=24144125

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14246875A Expired JPS5615071B2 (https=) 1974-12-31 1975-12-02

Country Status (7)

Country Link
US (1) US3916390A (https=)
JP (1) JPS5615071B2 (https=)
CA (1) CA1038496A (https=)
DE (1) DE2557359C2 (https=)
FR (1) FR2296913A1 (https=)
GB (1) GB1483029A (https=)
IT (1) IT1051404B (https=)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5279630A (en) * 1975-12-25 1977-07-04 Toshiba Corp Data processing unit
US3986180A (en) * 1975-09-22 1976-10-12 International Business Machines Corporation Depletion mode field effect transistor memory system
US4094008A (en) * 1976-06-18 1978-06-06 Ncr Corporation Alterable capacitor memory array
US4091460A (en) * 1976-10-05 1978-05-23 The United States Of America As Represented By The Secretary Of The Air Force Quasi static, virtually nonvolatile random access memory cell
US4064492A (en) * 1976-10-05 1977-12-20 Schuermeyer Fritz L Virtually nonvolatile random access memory cell
GB1545169A (en) * 1977-09-22 1979-05-02 Burroughs Corp Data processor system including data-save controller for protection against loss of volatile memory information during power failure
JPS55138104A (en) * 1979-04-13 1980-10-28 Hitachi Ltd Engine controller
US4327410A (en) * 1980-03-26 1982-04-27 Ncr Corporation Processor auto-recovery system
US4363110A (en) * 1980-12-22 1982-12-07 International Business Machines Corp. Non-volatile dynamic RAM cell
DE3174858D1 (en) * 1980-12-25 1986-07-24 Fujitsu Ltd Nonvolatile semiconductor memory device
US4525800A (en) * 1981-06-01 1985-06-25 General Electric Co. Enhanced reliability data storage system with second memory for preserving time-dependent progressively updated data from destructive transient conditions
DE3123654A1 (de) * 1981-06-15 1983-01-20 Vdo Adolf Schindling Ag, 6000 Frankfurt Schaltungsanordnung zur speicherung eines mehrstelligen dekadischen zaehlwerts einer von einem fahrzeug zurueckgelegten wegstrecke
US4432072A (en) * 1981-12-31 1984-02-14 International Business Machines Corporation Non-volatile dynamic RAM cell
US4446535A (en) * 1981-12-31 1984-05-01 International Business Machines Corporation Non-inverting non-volatile dynamic RAM cell
US4471471A (en) * 1981-12-31 1984-09-11 International Business Machines Corporation Non-volatile RAM device
JPS59967A (ja) * 1983-06-03 1984-01-06 Hitachi Ltd 半導体不揮発性記憶装置
US4615020A (en) * 1983-12-06 1986-09-30 Advanced Micro Devices, Inc. Nonvolatile dynamic ram circuit
US4959774A (en) * 1984-07-06 1990-09-25 Ampex Corporation Shadow memory system for storing variable backup blocks in consecutive time periods
US4651307A (en) * 1984-11-01 1987-03-17 Motorola, Inc. Non-volatile memory storage system
US4742482A (en) * 1985-10-29 1988-05-03 Hayes Microcomputer Products, Inc. Modem controller
US4860228A (en) * 1987-02-24 1989-08-22 Motorola, Inc. Non-volatile memory incremental counting system
US4861976A (en) * 1988-06-06 1989-08-29 American Telephone And Telegraph Company, At&T Bell Laboratories Optical or opto-electronic device having a trapping layer in contact with a semiconductive layer
US4965828A (en) * 1989-04-05 1990-10-23 Quadri Corporation Non-volatile semiconductor memory with SCRAM hold cycle prior to SCRAM-to-E2 PROM backup transfer
JP2825135B2 (ja) * 1990-03-06 1998-11-18 富士通株式会社 半導体記憶装置及びその情報書込読出消去方法
US5544312A (en) * 1994-04-29 1996-08-06 Intel Corporation Method of detecting loss of power during block erasure and while writing sector data to a solid state disk
US5598367A (en) * 1995-06-07 1997-01-28 International Business Machines Corporation Trench EPROM
US6181630B1 (en) * 1999-02-23 2001-01-30 Genatek, Inc. Method of stabilizing data stored in volatile memory
US6473355B2 (en) 2000-12-01 2002-10-29 Genatek, Inc. Apparatus for using volatile memory for long-term storage
US6742140B2 (en) 2000-12-01 2004-05-25 Jason R. Caulkins Method for using volatile memory for long-term storage
KR100719178B1 (ko) * 2003-08-29 2007-05-17 주식회사 하이닉스반도체 비휘발성 디램의 구동방법
US8904098B2 (en) 2007-06-01 2014-12-02 Netlist, Inc. Redundant backup using non-volatile memory
US8301833B1 (en) 2007-06-01 2012-10-30 Netlist, Inc. Non-volatile memory module
US8874831B2 (en) 2007-06-01 2014-10-28 Netlist, Inc. Flash-DRAM hybrid memory module
US8154259B2 (en) * 2007-07-25 2012-04-10 Agiga Tech Inc. Capacitor save energy verification
US8046546B2 (en) * 2007-07-25 2011-10-25 AGIGA Tech Variable partitioning in a hybrid memory subsystem
US8074034B2 (en) * 2007-07-25 2011-12-06 Agiga Tech Inc. Hybrid nonvolatile ram
US7865679B2 (en) * 2007-07-25 2011-01-04 AgigA Tech Inc., 12700 Power interrupt recovery in a hybrid memory subsystem
US9842628B2 (en) * 2008-07-10 2017-12-12 Agiga Tech Inc. Capacitor enablement voltage level adjustment method and apparatus
US8479061B2 (en) * 2009-09-24 2013-07-02 AGIGA Tech Solid state memory cartridge with wear indication
US8468317B2 (en) 2011-06-07 2013-06-18 Agiga Tech Inc. Apparatus and method for improved data restore in a memory system
US10380022B2 (en) 2011-07-28 2019-08-13 Netlist, Inc. Hybrid memory module and system and method of operating the same
US10198350B2 (en) 2011-07-28 2019-02-05 Netlist, Inc. Memory module having volatile and non-volatile memory subsystems and method of operation
US10838646B2 (en) 2011-07-28 2020-11-17 Netlist, Inc. Method and apparatus for presearching stored data
US9214465B2 (en) 2012-07-24 2015-12-15 Flashsilicon Incorporation Structures and operational methods of non-volatile dynamic random access memory devices
US10372551B2 (en) 2013-03-15 2019-08-06 Netlist, Inc. Hybrid memory system with configurable error thresholds and failure analysis capability
US9436600B2 (en) 2013-06-11 2016-09-06 Svic No. 28 New Technology Business Investment L.L.P. Non-volatile memory storage for multi-channel memory system
US10248328B2 (en) 2013-11-07 2019-04-02 Netlist, Inc. Direct data move between DRAM and storage on a memory module

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3387286A (en) * 1967-07-14 1968-06-04 Ibm Field-effect transistor memory
US4003701A (en) * 1971-02-02 1977-01-18 Scott Paper Company Graft copolymerization processes
JPS5432915B2 (https=) * 1971-09-10 1979-10-17
US3771148A (en) * 1972-03-31 1973-11-06 Ncr Nonvolatile capacitive memory cell
US3761901A (en) * 1972-06-28 1973-09-25 Ncr Nonvolatile memory cell
US3774177A (en) * 1972-10-16 1973-11-20 Ncr Co Nonvolatile random access memory cell using an alterable threshold field effect write transistor
US3811076A (en) * 1973-01-02 1974-05-14 Ibm Field effect transistor integrated circuit and memory

Also Published As

Publication number Publication date
GB1483029A (en) 1977-08-17
FR2296913A1 (fr) 1976-07-30
JPS5180731A (https=) 1976-07-14
US3916390A (en) 1975-10-28
FR2296913B1 (https=) 1978-05-12
IT1051404B (it) 1981-04-21
CA1038496A (en) 1978-09-12
DE2557359C2 (de) 1983-05-05
DE2557359A1 (de) 1976-07-08

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