CA1038496A - Dynamic memory with non-volatile back-up mode - Google Patents

Dynamic memory with non-volatile back-up mode

Info

Publication number
CA1038496A
CA1038496A CA239,394A CA239394A CA1038496A CA 1038496 A CA1038496 A CA 1038496A CA 239394 A CA239394 A CA 239394A CA 1038496 A CA1038496 A CA 1038496A
Authority
CA
Canada
Prior art keywords
memory
volatile
memory system
threshold
stored
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA239,394A
Other languages
English (en)
French (fr)
Inventor
Joseph J. Chang
Richard A. Kenyon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of CA1038496A publication Critical patent/CA1038496A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H10D84/813—Combinations of field-effect devices and capacitor only

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Memory System (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
CA239,394A 1974-12-31 1975-11-12 Dynamic memory with non-volatile back-up mode Expired CA1038496A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US537796A US3916390A (en) 1974-12-31 1974-12-31 Dynamic memory with non-volatile back-up mode

Publications (1)

Publication Number Publication Date
CA1038496A true CA1038496A (en) 1978-09-12

Family

ID=24144125

Family Applications (1)

Application Number Title Priority Date Filing Date
CA239,394A Expired CA1038496A (en) 1974-12-31 1975-11-12 Dynamic memory with non-volatile back-up mode

Country Status (7)

Country Link
US (1) US3916390A (https=)
JP (1) JPS5615071B2 (https=)
CA (1) CA1038496A (https=)
DE (1) DE2557359C2 (https=)
FR (1) FR2296913A1 (https=)
GB (1) GB1483029A (https=)
IT (1) IT1051404B (https=)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5279630A (en) * 1975-12-25 1977-07-04 Toshiba Corp Data processing unit
US3986180A (en) * 1975-09-22 1976-10-12 International Business Machines Corporation Depletion mode field effect transistor memory system
US4094008A (en) * 1976-06-18 1978-06-06 Ncr Corporation Alterable capacitor memory array
US4091460A (en) * 1976-10-05 1978-05-23 The United States Of America As Represented By The Secretary Of The Air Force Quasi static, virtually nonvolatile random access memory cell
US4064492A (en) * 1976-10-05 1977-12-20 Schuermeyer Fritz L Virtually nonvolatile random access memory cell
GB1545169A (en) * 1977-09-22 1979-05-02 Burroughs Corp Data processor system including data-save controller for protection against loss of volatile memory information during power failure
JPS55138104A (en) * 1979-04-13 1980-10-28 Hitachi Ltd Engine controller
US4327410A (en) * 1980-03-26 1982-04-27 Ncr Corporation Processor auto-recovery system
US4363110A (en) * 1980-12-22 1982-12-07 International Business Machines Corp. Non-volatile dynamic RAM cell
DE3174858D1 (en) * 1980-12-25 1986-07-24 Fujitsu Ltd Nonvolatile semiconductor memory device
US4525800A (en) * 1981-06-01 1985-06-25 General Electric Co. Enhanced reliability data storage system with second memory for preserving time-dependent progressively updated data from destructive transient conditions
DE3123654A1 (de) * 1981-06-15 1983-01-20 Vdo Adolf Schindling Ag, 6000 Frankfurt Schaltungsanordnung zur speicherung eines mehrstelligen dekadischen zaehlwerts einer von einem fahrzeug zurueckgelegten wegstrecke
US4432072A (en) * 1981-12-31 1984-02-14 International Business Machines Corporation Non-volatile dynamic RAM cell
US4446535A (en) * 1981-12-31 1984-05-01 International Business Machines Corporation Non-inverting non-volatile dynamic RAM cell
US4471471A (en) * 1981-12-31 1984-09-11 International Business Machines Corporation Non-volatile RAM device
JPS59967A (ja) * 1983-06-03 1984-01-06 Hitachi Ltd 半導体不揮発性記憶装置
US4615020A (en) * 1983-12-06 1986-09-30 Advanced Micro Devices, Inc. Nonvolatile dynamic ram circuit
US4959774A (en) * 1984-07-06 1990-09-25 Ampex Corporation Shadow memory system for storing variable backup blocks in consecutive time periods
US4651307A (en) * 1984-11-01 1987-03-17 Motorola, Inc. Non-volatile memory storage system
US4742482A (en) * 1985-10-29 1988-05-03 Hayes Microcomputer Products, Inc. Modem controller
US4860228A (en) * 1987-02-24 1989-08-22 Motorola, Inc. Non-volatile memory incremental counting system
US4861976A (en) * 1988-06-06 1989-08-29 American Telephone And Telegraph Company, At&T Bell Laboratories Optical or opto-electronic device having a trapping layer in contact with a semiconductive layer
US4965828A (en) * 1989-04-05 1990-10-23 Quadri Corporation Non-volatile semiconductor memory with SCRAM hold cycle prior to SCRAM-to-E2 PROM backup transfer
JP2825135B2 (ja) * 1990-03-06 1998-11-18 富士通株式会社 半導体記憶装置及びその情報書込読出消去方法
US5544312A (en) * 1994-04-29 1996-08-06 Intel Corporation Method of detecting loss of power during block erasure and while writing sector data to a solid state disk
US5598367A (en) * 1995-06-07 1997-01-28 International Business Machines Corporation Trench EPROM
US6181630B1 (en) * 1999-02-23 2001-01-30 Genatek, Inc. Method of stabilizing data stored in volatile memory
US6473355B2 (en) 2000-12-01 2002-10-29 Genatek, Inc. Apparatus for using volatile memory for long-term storage
US6742140B2 (en) 2000-12-01 2004-05-25 Jason R. Caulkins Method for using volatile memory for long-term storage
KR100719178B1 (ko) * 2003-08-29 2007-05-17 주식회사 하이닉스반도체 비휘발성 디램의 구동방법
US8904098B2 (en) 2007-06-01 2014-12-02 Netlist, Inc. Redundant backup using non-volatile memory
US8301833B1 (en) 2007-06-01 2012-10-30 Netlist, Inc. Non-volatile memory module
US8874831B2 (en) 2007-06-01 2014-10-28 Netlist, Inc. Flash-DRAM hybrid memory module
US8154259B2 (en) * 2007-07-25 2012-04-10 Agiga Tech Inc. Capacitor save energy verification
US8046546B2 (en) * 2007-07-25 2011-10-25 AGIGA Tech Variable partitioning in a hybrid memory subsystem
US8074034B2 (en) * 2007-07-25 2011-12-06 Agiga Tech Inc. Hybrid nonvolatile ram
US7865679B2 (en) * 2007-07-25 2011-01-04 AgigA Tech Inc., 12700 Power interrupt recovery in a hybrid memory subsystem
US9842628B2 (en) * 2008-07-10 2017-12-12 Agiga Tech Inc. Capacitor enablement voltage level adjustment method and apparatus
US8479061B2 (en) * 2009-09-24 2013-07-02 AGIGA Tech Solid state memory cartridge with wear indication
US8468317B2 (en) 2011-06-07 2013-06-18 Agiga Tech Inc. Apparatus and method for improved data restore in a memory system
US10380022B2 (en) 2011-07-28 2019-08-13 Netlist, Inc. Hybrid memory module and system and method of operating the same
US10198350B2 (en) 2011-07-28 2019-02-05 Netlist, Inc. Memory module having volatile and non-volatile memory subsystems and method of operation
US10838646B2 (en) 2011-07-28 2020-11-17 Netlist, Inc. Method and apparatus for presearching stored data
US9214465B2 (en) 2012-07-24 2015-12-15 Flashsilicon Incorporation Structures and operational methods of non-volatile dynamic random access memory devices
US10372551B2 (en) 2013-03-15 2019-08-06 Netlist, Inc. Hybrid memory system with configurable error thresholds and failure analysis capability
US9436600B2 (en) 2013-06-11 2016-09-06 Svic No. 28 New Technology Business Investment L.L.P. Non-volatile memory storage for multi-channel memory system
US10248328B2 (en) 2013-11-07 2019-04-02 Netlist, Inc. Direct data move between DRAM and storage on a memory module

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3387286A (en) * 1967-07-14 1968-06-04 Ibm Field-effect transistor memory
US4003701A (en) * 1971-02-02 1977-01-18 Scott Paper Company Graft copolymerization processes
JPS5432915B2 (https=) * 1971-09-10 1979-10-17
US3771148A (en) * 1972-03-31 1973-11-06 Ncr Nonvolatile capacitive memory cell
US3761901A (en) * 1972-06-28 1973-09-25 Ncr Nonvolatile memory cell
US3774177A (en) * 1972-10-16 1973-11-20 Ncr Co Nonvolatile random access memory cell using an alterable threshold field effect write transistor
US3811076A (en) * 1973-01-02 1974-05-14 Ibm Field effect transistor integrated circuit and memory

Also Published As

Publication number Publication date
GB1483029A (en) 1977-08-17
FR2296913A1 (fr) 1976-07-30
JPS5180731A (https=) 1976-07-14
US3916390A (en) 1975-10-28
FR2296913B1 (https=) 1978-05-12
IT1051404B (it) 1981-04-21
JPS5615071B2 (https=) 1981-04-08
DE2557359C2 (de) 1983-05-05
DE2557359A1 (de) 1976-07-08

Similar Documents

Publication Publication Date Title
CA1038496A (en) Dynamic memory with non-volatile back-up mode
US5065362A (en) Non-volatile ram with integrated compact static ram load configuration
US5319589A (en) Dynamic content addressable memory device and a method of operating thereof
US3387286A (en) Field-effect transistor memory
US3796998A (en) Mos dynamic memory
EP1828716B1 (en) System and method for reducing power consumption during extended refresh periods of dynamic random access memory devices
US5465231A (en) EEPROM and logic LSI chip including such EEPROM
US5007022A (en) Two-port two-transistor DRAM
US4432072A (en) Non-volatile dynamic RAM cell
US3740731A (en) One transistor dynamic memory cell
US6385113B1 (en) Method for operating an integrated circuit having a sleep mode
US5912840A (en) Memory cell architecture utilizing a transistor having a dual access gate
EP0068116B1 (en) Memory array
US6909626B2 (en) Method and related circuit for accessing locations of a ferroelectric memory
EP0741386B1 (en) Decoder and decoder driver with voltage level translator
US5400279A (en) Nonvolatile semiconductor memory device with NAND cell structure
US4103344A (en) Method and apparatus for addressing a non-volatile memory array
US4161791A (en) Automatic refresh memory cell
US3774177A (en) Nonvolatile random access memory cell using an alterable threshold field effect write transistor
EP0944092B1 (en) Non-volatile semiconductor memory device
CA1046641A (en) Switched capacitor non-volatile mnos random access memory cell
US5333128A (en) Semiconductor memory device having a circuit for reducing frequency of proceeding refresh in data retention mode
EP0057784B1 (en) Read-only/read-write memory
US5434816A (en) Two-transistor dynamic random-access memory cell having a common read/write terminal
US3986054A (en) High voltage integrated driver circuit