JPS56145199A - Synthesis of cubic boron nitride - Google Patents

Synthesis of cubic boron nitride

Info

Publication number
JPS56145199A
JPS56145199A JP4355280A JP4355280A JPS56145199A JP S56145199 A JPS56145199 A JP S56145199A JP 4355280 A JP4355280 A JP 4355280A JP 4355280 A JP4355280 A JP 4355280A JP S56145199 A JPS56145199 A JP S56145199A
Authority
JP
Japan
Prior art keywords
boron nitride
cubic boron
substance
boronitride
calcium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4355280A
Other languages
English (en)
Other versions
JPS6253218B2 (ja
Inventor
Eiichi Iizuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Holdings Corp
Original Assignee
Showa Denko KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko KK filed Critical Showa Denko KK
Priority to JP4355280A priority Critical patent/JPS56145199A/ja
Publication of JPS56145199A publication Critical patent/JPS56145199A/ja
Publication of JPS6253218B2 publication Critical patent/JPS6253218B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP4355280A 1980-04-04 1980-04-04 Synthesis of cubic boron nitride Granted JPS56145199A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4355280A JPS56145199A (en) 1980-04-04 1980-04-04 Synthesis of cubic boron nitride

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4355280A JPS56145199A (en) 1980-04-04 1980-04-04 Synthesis of cubic boron nitride

Publications (2)

Publication Number Publication Date
JPS56145199A true JPS56145199A (en) 1981-11-11
JPS6253218B2 JPS6253218B2 (ja) 1987-11-09

Family

ID=12666910

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4355280A Granted JPS56145199A (en) 1980-04-04 1980-04-04 Synthesis of cubic boron nitride

Country Status (1)

Country Link
JP (1) JPS56145199A (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5076860A (en) * 1989-01-13 1991-12-31 Kabushiki Kaisha Toshiba Algan compound semiconductor material
FR2686101A1 (fr) * 1992-01-14 1993-07-16 Centre Nat Rech Scient Procede de preparation de monocristaux de nitrure de bore cubique.
US5355637A (en) * 1991-06-04 1994-10-18 Rolls-Royce Plc Abrasive medium
CN112316847A (zh) * 2020-11-11 2021-02-05 吉林大学 一种磷氮化合物的高温高压合成方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63200516U (ja) * 1987-06-15 1988-12-23

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5076860A (en) * 1989-01-13 1991-12-31 Kabushiki Kaisha Toshiba Algan compound semiconductor material
US5355637A (en) * 1991-06-04 1994-10-18 Rolls-Royce Plc Abrasive medium
FR2686101A1 (fr) * 1992-01-14 1993-07-16 Centre Nat Rech Scient Procede de preparation de monocristaux de nitrure de bore cubique.
CN112316847A (zh) * 2020-11-11 2021-02-05 吉林大学 一种磷氮化合物的高温高压合成方法

Also Published As

Publication number Publication date
JPS6253218B2 (ja) 1987-11-09

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