JPS56137641A - Checking method for semiconductor on annealing process - Google Patents

Checking method for semiconductor on annealing process

Info

Publication number
JPS56137641A
JPS56137641A JP4038380A JP4038380A JPS56137641A JP S56137641 A JPS56137641 A JP S56137641A JP 4038380 A JP4038380 A JP 4038380A JP 4038380 A JP4038380 A JP 4038380A JP S56137641 A JPS56137641 A JP S56137641A
Authority
JP
Japan
Prior art keywords
semiconductor
annealing process
raman
annealing
phonon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4038380A
Other languages
Japanese (ja)
Other versions
JPS5840331B2 (en
Inventor
Takashi Katoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP4038380A priority Critical patent/JPS5840331B2/en
Publication of JPS56137641A publication Critical patent/JPS56137641A/en
Publication of JPS5840331B2 publication Critical patent/JPS5840331B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To carry out proper annealing process by irradiating laser beam on the surface of a semiconductor and detecting a state where the width and peak intensity of the Raman band corresponding to a phonon peculiar to a semiconductor in the spectrum of the Raman light are almost constant. CONSTITUTION:In order to recover an injury and activate injected impurities, a fixed amount of energy is required in the annealing process of semiconductor. However, it is harmful to supply an excess energy. The Raman scattered light generated when a laser beam is irradiated on the surface of a semiconductor contains various types of information concerning the structural turbulence of semiconductor. The peak intensity and band width of the Raman band changes on account of a phonon peculiar to the semiconductor, depending on the degree of annealing. Accordingly, these values are measured and annealing process is finished when they are almost constant. Thus it is possible to determine the degree and ideal condition of annealing of a semiconductor having a shortage of ion injection does or various types of amorphous semiconductor, so that proper annealing process can be carried out.
JP4038380A 1980-03-31 1980-03-31 Semiconductor inspection method related to annealing treatment Expired JPS5840331B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4038380A JPS5840331B2 (en) 1980-03-31 1980-03-31 Semiconductor inspection method related to annealing treatment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4038380A JPS5840331B2 (en) 1980-03-31 1980-03-31 Semiconductor inspection method related to annealing treatment

Publications (2)

Publication Number Publication Date
JPS56137641A true JPS56137641A (en) 1981-10-27
JPS5840331B2 JPS5840331B2 (en) 1983-09-05

Family

ID=12579124

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4038380A Expired JPS5840331B2 (en) 1980-03-31 1980-03-31 Semiconductor inspection method related to annealing treatment

Country Status (1)

Country Link
JP (1) JPS5840331B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6271066B1 (en) 1991-03-18 2001-08-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material and method for forming the same and thin film transistor
US6562672B2 (en) 1991-03-18 2003-05-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material and method for forming the same and thin film transistor

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0128990Y2 (en) * 1984-10-31 1989-09-04
JPS6257829A (en) * 1985-09-06 1987-03-13 Olympus Optical Co Ltd Parts mounter

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6271066B1 (en) 1991-03-18 2001-08-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material and method for forming the same and thin film transistor
US6562672B2 (en) 1991-03-18 2003-05-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material and method for forming the same and thin film transistor

Also Published As

Publication number Publication date
JPS5840331B2 (en) 1983-09-05

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