JPS56130758A - Photoconductor - Google Patents
PhotoconductorInfo
- Publication number
- JPS56130758A JPS56130758A JP3405680A JP3405680A JPS56130758A JP S56130758 A JPS56130758 A JP S56130758A JP 3405680 A JP3405680 A JP 3405680A JP 3405680 A JP3405680 A JP 3405680A JP S56130758 A JPS56130758 A JP S56130758A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- photoconductor layer
- 5mum
- photoconductor
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/043—Photoconductive layers characterised by having two or more layers or characterised by their composite structure
- G03G5/0433—Photoconductive layers characterised by having two or more layers or characterised by their composite structure all layers being inorganic
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Light Receiving Elements (AREA)
- Photoreceptors In Electrophotography (AREA)
Abstract
PURPOSE:To obtain a selenium type photoconductor which has high sensitivity in the long-wavelength range, by providing a selenium type photoconductor layer and tellurium-containing photoconductor layer on a conductive base. CONSTITUTION:On conductive substrate 1 of Al, Ni, etc., various layers are piled up in layers successively; they are base material layer 2 of anode oxidation aluminum, polycarbonate, etc., Se type photoconductor layer 3 of about 5-200mum in thickness consisting of Se or essentially of Se, Te containing photoconductor layer 4 of 0.05-5mum in thickness consisting of Se-Te or essentially of Se-Te and containing Te by 15% or more, crystallization preventive Se type photoconductor layer 5 of about 0.01-5mum in thickness of Se-As, etc., whose Te content rate is higher than that of layer 4 or zero, Te containing photoconductor layer 6 of 0.05-5mum in thickness whose Te content rate is 15% or more, and crystallization preventive Se type photoconductor layer 7 of about 0.01-5mum. Thus, a variously usable photoconductor having small darkness attenuation and long life is obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3405680A JPS56130758A (en) | 1980-03-19 | 1980-03-19 | Photoconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3405680A JPS56130758A (en) | 1980-03-19 | 1980-03-19 | Photoconductor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56130758A true JPS56130758A (en) | 1981-10-13 |
Family
ID=12403613
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3405680A Pending JPS56130758A (en) | 1980-03-19 | 1980-03-19 | Photoconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56130758A (en) |
-
1980
- 1980-03-19 JP JP3405680A patent/JPS56130758A/en active Pending
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