JPS5612746A - Semiconductor integrated circuit - Google Patents
Semiconductor integrated circuitInfo
- Publication number
- JPS5612746A JPS5612746A JP8702879A JP8702879A JPS5612746A JP S5612746 A JPS5612746 A JP S5612746A JP 8702879 A JP8702879 A JP 8702879A JP 8702879 A JP8702879 A JP 8702879A JP S5612746 A JPS5612746 A JP S5612746A
- Authority
- JP
- Japan
- Prior art keywords
- wire
- circuit elements
- integrated circuit
- semiconductor integrated
- disconnection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE:To eliminate the disconnection of a wire with a simple separation process by electrically insulated separation between the circuit elements with organic high polymers. CONSTITUTION:An n<+> buried layer 2 is formed on the p<-> silicon substrate 3 and an n<-> epitaxial layer 1 is grown thereon. The circuit elements are formed on the epitaxial layer 1 on the buried layer 2. An organic high polymer 8 such as polyimide is applied thick in the etched groove formed between the circuit elements and the wire 9 of Al or the like is provided. This simplifies the insulated separation process while easing the roughness of the wafer surface, and the surface becomes almost flat thereby checking disconnection or the like of the wire 9.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8702879A JPS5612746A (en) | 1979-07-10 | 1979-07-10 | Semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8702879A JPS5612746A (en) | 1979-07-10 | 1979-07-10 | Semiconductor integrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5612746A true JPS5612746A (en) | 1981-02-07 |
Family
ID=13903492
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8702879A Pending JPS5612746A (en) | 1979-07-10 | 1979-07-10 | Semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5612746A (en) |
-
1979
- 1979-07-10 JP JP8702879A patent/JPS5612746A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CA2199346A1 (en) | Semiconductor device and manufacturing method of the same | |
KR900003968A (en) | Semiconductor device manufacturing method | |
EP0323856A3 (en) | Substrate structure for composite semiconductor device | |
DE59407313D1 (en) | INTEGRATED MICROMECHANICAL SENSOR DEVICE AND METHOD FOR THE PRODUCTION THEREOF | |
JPS5669844A (en) | Manufacture of semiconductor device | |
EP0349107A3 (en) | Semiconductor devices | |
GB1467754A (en) | Semiconductor arrangements | |
EP0282012A3 (en) | Superconducting semiconductor device | |
KR890002972A (en) | Method of contact between two conductors or semiconductor layers deposited on substrate | |
JPS52156580A (en) | Semiconductor integrated circuit device and its production | |
JPS5612746A (en) | Semiconductor integrated circuit | |
JPS5660054A (en) | Semiconductor integrated circuit | |
JPS5333590A (en) | Production of substrate for semiconductor integrated circuit | |
JPS6459940A (en) | Manufacture of semiconductor device | |
JPS6484733A (en) | Semiconductor device | |
JPS572519A (en) | Manufacture of semiconductor device | |
TW330330B (en) | A semiconductor device | |
SE8504204L (en) | A semiconductor device with buried resistance | |
JPS57164560A (en) | Manufacture of semiconductor integrated circuit device | |
JPS5688335A (en) | Semiconductor device | |
JPS5687346A (en) | Manufacture of semiconductor device | |
JPS6477941A (en) | Semiconductor device and manufacture thereof | |
JPS5286782A (en) | Production of semiconductor integrated circuit | |
JPS55165650A (en) | Semiconductor integrated circuit | |
JPS57111058A (en) | Bipolar semiconductor integrated circuit device |