JPS56125298A - Growth of metal layer or alloy layer on substrate - Google Patents

Growth of metal layer or alloy layer on substrate

Info

Publication number
JPS56125298A
JPS56125298A JP1147381A JP1147381A JPS56125298A JP S56125298 A JPS56125298 A JP S56125298A JP 1147381 A JP1147381 A JP 1147381A JP 1147381 A JP1147381 A JP 1147381A JP S56125298 A JPS56125298 A JP S56125298A
Authority
JP
Japan
Prior art keywords
growth
substrate
layer
metal layer
alloy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1147381A
Other languages
English (en)
Japanese (ja)
Inventor
Hiibaa Konraato
Maiyaa Noruberuto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of JPS56125298A publication Critical patent/JPS56125298A/ja
Pending legal-status Critical Current

Links

Classifications

    • H10W20/065—
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/52—Alloys
    • H10P95/00—
    • H10W70/05—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/905—Electron beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP1147381A 1980-01-30 1981-01-28 Growth of metal layer or alloy layer on substrate Pending JPS56125298A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19803003285 DE3003285A1 (de) 1980-01-30 1980-01-30 Verfahren zum herstellen niederohmiger, einkristalliner metall- oder legierungsschichten auf substraten

Publications (1)

Publication Number Publication Date
JPS56125298A true JPS56125298A (en) 1981-10-01

Family

ID=6093269

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1147381A Pending JPS56125298A (en) 1980-01-30 1981-01-28 Growth of metal layer or alloy layer on substrate

Country Status (4)

Country Link
US (1) US4351695A (cg-RX-API-DMAC10.html)
EP (1) EP0033506B1 (cg-RX-API-DMAC10.html)
JP (1) JPS56125298A (cg-RX-API-DMAC10.html)
DE (1) DE3003285A1 (cg-RX-API-DMAC10.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61121322A (ja) * 1984-11-19 1986-06-09 Hitachi Ltd 薄膜形成装置
JPS61296618A (ja) * 1985-06-25 1986-12-27 松下電工株式会社 改質接点材料の製法

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4464422A (en) * 1982-11-09 1984-08-07 Murata Manufacturing Co., Ltd. Process for preventing oxidation of copper film on ceramic body
JPS6115967A (ja) * 1984-06-29 1986-01-24 Sumitomo Electric Ind Ltd 表面処理方法
GB2165692B (en) * 1984-08-25 1989-05-04 Ricoh Kk Manufacture of interconnection patterns
IL79107A (en) * 1985-06-17 1989-03-31 De Beers Ind Diamond Ion implantation in crystalline substrate
US4863810A (en) * 1987-09-21 1989-09-05 Universal Energy Systems, Inc. Corrosion resistant amorphous metallic coatings
WO1999005728A1 (fr) 1997-07-25 1999-02-04 Nichia Chemical Industries, Ltd. Dispositif a semi-conducteur en nitrure
US5879975A (en) * 1997-09-05 1999-03-09 Advanced Micro Devices, Inc. Heat treating nitrogen implanted gate electrode layer for improved gate electrode etch profile
JP3770014B2 (ja) 1999-02-09 2006-04-26 日亜化学工業株式会社 窒化物半導体素子
EP1168539B1 (en) 1999-03-04 2009-12-16 Nichia Corporation Nitride semiconductor laser device
CA2393330A1 (en) * 2000-01-25 2001-08-02 Boston Scientific Limited Manufacturing medical devices by vapor deposition
EP1593154B1 (en) * 2003-02-03 2011-07-20 Nxp B.V. Method of manufacturing a semiconductor device with mos transistors comprising gate electrodes formed in a packet of metal layers deposited upon one another
KR100574560B1 (ko) * 2004-12-31 2006-04-27 동부일렉트로닉스 주식회사 반도체 소자의 금속배선 형성 방법
TWI362769B (en) 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor
US7759208B1 (en) * 2009-03-27 2010-07-20 International Business Machines Corporation Low temperature ion implantation for improved silicide contacts
CN118374786B (zh) * 2024-06-25 2024-09-10 嘉兴市豪能科技股份有限公司 一种多晶镀铝膜的单晶化转变方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5344170A (en) * 1976-10-05 1978-04-20 Fujitsu Ltd Production of semiconductor device
JPS548129A (en) * 1977-06-20 1979-01-22 Siemens Ag Method of making metallic layer

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3458368A (en) * 1966-05-23 1969-07-29 Texas Instruments Inc Integrated circuits and fabrication thereof
GB1258259A (cg-RX-API-DMAC10.html) * 1968-04-05 1971-12-30
US3585088A (en) * 1968-10-18 1971-06-15 Ibm Methods of producing single crystals on supporting substrates
US3900345A (en) * 1973-08-02 1975-08-19 Motorola Inc Thin low temperature epi regions by conversion of an amorphous layer
DD115708A1 (cg-RX-API-DMAC10.html) * 1974-10-01 1975-10-12
US4017890A (en) * 1975-10-24 1977-04-12 International Business Machines Corporation Intermetallic compound layer in thin films for improved electromigration resistance
DE2612098A1 (de) * 1976-03-22 1977-09-29 Siemens Ag Verfahren zum gleichmaessigen metallisieren eines substrats
DE2644208C3 (de) * 1976-09-30 1981-04-30 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Herstellung einer einkristallinen Schicht auf einer Unterlage
US4258078A (en) * 1978-06-22 1981-03-24 Bell Telephone Laboratories, Incorporated Metallization for integrated circuits
US4214918A (en) * 1978-10-12 1980-07-29 Stanford University Method of forming polycrystalline semiconductor interconnections, resistors and contacts by applying radiation beam
AU532935B2 (en) * 1978-11-02 1983-10-20 Ford Motor Co. Vapour deposition of metals

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5344170A (en) * 1976-10-05 1978-04-20 Fujitsu Ltd Production of semiconductor device
JPS548129A (en) * 1977-06-20 1979-01-22 Siemens Ag Method of making metallic layer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61121322A (ja) * 1984-11-19 1986-06-09 Hitachi Ltd 薄膜形成装置
JPS61296618A (ja) * 1985-06-25 1986-12-27 松下電工株式会社 改質接点材料の製法

Also Published As

Publication number Publication date
DE3003285A1 (de) 1981-08-06
EP0033506B1 (de) 1984-05-16
EP0033506A1 (de) 1981-08-12
US4351695A (en) 1982-09-28
DE3003285C2 (cg-RX-API-DMAC10.html) 1989-04-13

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