JPS56120171A - Light semiconductor device - Google Patents

Light semiconductor device

Info

Publication number
JPS56120171A
JPS56120171A JP2292180A JP2292180A JPS56120171A JP S56120171 A JPS56120171 A JP S56120171A JP 2292180 A JP2292180 A JP 2292180A JP 2292180 A JP2292180 A JP 2292180A JP S56120171 A JPS56120171 A JP S56120171A
Authority
JP
Japan
Prior art keywords
layer
light
electron
hole
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2292180A
Other languages
Japanese (ja)
Other versions
JPH0152909B2 (en
Inventor
Eiichi Yamaguchi
Takeshi Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP2292180A priority Critical patent/JPS56120171A/en
Publication of JPS56120171A publication Critical patent/JPS56120171A/en
Publication of JPH0152909B2 publication Critical patent/JPH0152909B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To intend the shortness of a response time by preventing the diffusion towards the depth direction of an electron excited by light and a positive hole. CONSTITUTION:An InGaAsP 11 having a forbidden band breadth Eg1=0.9eV is epitaxially formed on an InP 10 having Eg=1.3eV. In this case, if Eg2-Eg1 is selected to be Eg2-Eg1>=0.4eV, the leakage of the photoexcited electron and of the hole can be restrained by less than 10%. Further, the thickness of a layer 11 is provided to be equal to the absorption wave length of the light. A light acceptance zone 13 is made by arranging a pair of Au-electrodes 12a and 12b at intervals of 3- 100mum, said layer 10 being provided with an earth electrode 14 at the rear thereof. The electron 15 and the hole 16 excited within the layer 11 can not diffuse from layer 11 to l0 due to the wall 17 of the forbidden band caused by hetero-juction. From this reason the concn. is stabilized and a velocity of an optical switch having a super high speed is obtained by flowing it into electrodes 12a and 12b.
JP2292180A 1980-02-26 1980-02-26 Light semiconductor device Granted JPS56120171A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2292180A JPS56120171A (en) 1980-02-26 1980-02-26 Light semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2292180A JPS56120171A (en) 1980-02-26 1980-02-26 Light semiconductor device

Publications (2)

Publication Number Publication Date
JPS56120171A true JPS56120171A (en) 1981-09-21
JPH0152909B2 JPH0152909B2 (en) 1989-11-10

Family

ID=12096099

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2292180A Granted JPS56120171A (en) 1980-02-26 1980-02-26 Light semiconductor device

Country Status (1)

Country Link
JP (1) JPS56120171A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4936386A (en) * 1972-01-31 1974-04-04
JPS51151094A (en) * 1975-06-20 1976-12-25 Matsushita Electric Ind Co Ltd Light conductive element and its manufacturing method
JPS5275286A (en) * 1975-12-19 1977-06-24 Fujitsu Ltd Production of radiant ray detector

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4936386A (en) * 1972-01-31 1974-04-04
JPS51151094A (en) * 1975-06-20 1976-12-25 Matsushita Electric Ind Co Ltd Light conductive element and its manufacturing method
JPS5275286A (en) * 1975-12-19 1977-06-24 Fujitsu Ltd Production of radiant ray detector

Also Published As

Publication number Publication date
JPH0152909B2 (en) 1989-11-10

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