JPS56118332A - Injection method for arsenic ion - Google Patents

Injection method for arsenic ion

Info

Publication number
JPS56118332A
JPS56118332A JP2141280A JP2141280A JPS56118332A JP S56118332 A JPS56118332 A JP S56118332A JP 2141280 A JP2141280 A JP 2141280A JP 2141280 A JP2141280 A JP 2141280A JP S56118332 A JPS56118332 A JP S56118332A
Authority
JP
Japan
Prior art keywords
injected
ions
injection method
constitution
leakage current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2141280A
Other languages
Japanese (ja)
Inventor
Hiroyuki Ikubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2141280A priority Critical patent/JPS56118332A/en
Publication of JPS56118332A publication Critical patent/JPS56118332A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System further characterised by the doping material

Abstract

PURPOSE:To reduce leakage current and improve reliability of a device by a method wherein after As ions are injected, an impurity not affecting mobility is injected subsequently. CONSTITUTION:After As ions of doping amount 4X10<15>/cm<3> have been injected into an Si substrate, O ions of doping amount approximately 10<12>/cm<3> are injected and annealed at 1,050 deg.C for approximately 10min. When the O ions are injected, the accelerating voltage is made slightly lower than when the As ions are injected. The O atoms absorb the defect of the P-N junction interface, so that leakage current decreases. Other atoms not affecting mobility, such as Ar, F, C and the like, can be also used. By said constitution, the reliability of such a device as a memory is remarkably improved.
JP2141280A 1980-02-22 1980-02-22 Injection method for arsenic ion Pending JPS56118332A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2141280A JPS56118332A (en) 1980-02-22 1980-02-22 Injection method for arsenic ion

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2141280A JPS56118332A (en) 1980-02-22 1980-02-22 Injection method for arsenic ion

Publications (1)

Publication Number Publication Date
JPS56118332A true JPS56118332A (en) 1981-09-17

Family

ID=12054301

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2141280A Pending JPS56118332A (en) 1980-02-22 1980-02-22 Injection method for arsenic ion

Country Status (1)

Country Link
JP (1) JPS56118332A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0350845A2 (en) * 1988-07-12 1990-01-17 Seiko Epson Corporation Semiconductor device with doped regions and method for manufacturing it
US5654209A (en) * 1988-07-12 1997-08-05 Seiko Epson Corporation Method of making N-type semiconductor region by implantation

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0350845A2 (en) * 1988-07-12 1990-01-17 Seiko Epson Corporation Semiconductor device with doped regions and method for manufacturing it
US5654209A (en) * 1988-07-12 1997-08-05 Seiko Epson Corporation Method of making N-type semiconductor region by implantation

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