JPS56116309A - Field effect transistor amplifier - Google Patents

Field effect transistor amplifier

Info

Publication number
JPS56116309A
JPS56116309A JP1923880A JP1923880A JPS56116309A JP S56116309 A JPS56116309 A JP S56116309A JP 1923880 A JP1923880 A JP 1923880A JP 1923880 A JP1923880 A JP 1923880A JP S56116309 A JPS56116309 A JP S56116309A
Authority
JP
Japan
Prior art keywords
mosfets
amplifier
fets
field effect
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1923880A
Other languages
Japanese (ja)
Inventor
Nobutaka Amada
Shigeki Inoue
Gichu Oota
Toru Sanbe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP1923880A priority Critical patent/JPS56116309A/en
Publication of JPS56116309A publication Critical patent/JPS56116309A/en
Pending legal-status Critical Current

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  • Amplifiers (AREA)

Abstract

PURPOSE: To obtain an amplifier suitable for an audio amplifier of high speed, broad band, high S/N and low distortion factor without storage delay, by constituting the amplifier only with FETs being the majority carrier.
CONSTITUTION: Junction type J-FETs 23, 24 of low noise are used for an input signal differential amplifying element, and they are in cascode-connection with MOSFETs 25, 26 so that a voltage ≥ several 10s volts or so can only be applied to FETs 23, 24. The load impedance of the voltage amplifying stage 3 can be increased by using MOSFETs 28, 27 for a constant current circuit element and MOSFETs 21, 22, allowing to asure sufficient gain. MOSFETs 17, 18 can be in push-pull connection for a power amplifier stage 4. Thus, the audio amplifier of high speed, broad band, low distortion factor and high S/N, can be obtained.
COPYRIGHT: (C)1981,JPO&Japio
JP1923880A 1980-02-20 1980-02-20 Field effect transistor amplifier Pending JPS56116309A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1923880A JPS56116309A (en) 1980-02-20 1980-02-20 Field effect transistor amplifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1923880A JPS56116309A (en) 1980-02-20 1980-02-20 Field effect transistor amplifier

Publications (1)

Publication Number Publication Date
JPS56116309A true JPS56116309A (en) 1981-09-12

Family

ID=11993805

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1923880A Pending JPS56116309A (en) 1980-02-20 1980-02-20 Field effect transistor amplifier

Country Status (1)

Country Link
JP (1) JPS56116309A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3631099A1 (en) * 1985-09-18 1987-03-26 Sgs Microelettronica Spa CMOS OUTPUT STAGE WITH LARGE VOLTAGE STROKE AND STABILIZATION OF THE REST OF REST

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3631099A1 (en) * 1985-09-18 1987-03-26 Sgs Microelettronica Spa CMOS OUTPUT STAGE WITH LARGE VOLTAGE STROKE AND STABILIZATION OF THE REST OF REST
US4730168A (en) * 1985-09-18 1988-03-08 Sgs Microelettronica Spa CMOS output stage with large voltage swing and with stabilization of the quiescent current

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