JPS5610752B2 - - Google Patents

Info

Publication number
JPS5610752B2
JPS5610752B2 JP2764773A JP2764773A JPS5610752B2 JP S5610752 B2 JPS5610752 B2 JP S5610752B2 JP 2764773 A JP2764773 A JP 2764773A JP 2764773 A JP2764773 A JP 2764773A JP S5610752 B2 JPS5610752 B2 JP S5610752B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP2764773A
Other versions
JPS494488A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS494488A publication Critical patent/JPS494488A/ja
Publication of JPS5610752B2 publication Critical patent/JPS5610752B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
    • H01L33/0016—Devices characterised by their operation having p-n or hi-lo junctions having at least two p-n junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
    • H01L31/147—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
    • H01L31/153—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Led Devices (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
  • Led Device Packages (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
JP2764773A 1972-03-14 1973-03-10 Expired JPS5610752B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7208826A FR2175574B1 (ja) 1972-03-14 1972-03-14

Publications (2)

Publication Number Publication Date
JPS494488A JPS494488A (ja) 1974-01-16
JPS5610752B2 true JPS5610752B2 (ja) 1981-03-10

Family

ID=9095172

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2764773A Expired JPS5610752B2 (ja) 1972-03-14 1973-03-10

Country Status (7)

Country Link
US (1) US3852797A (ja)
JP (1) JPS5610752B2 (ja)
DE (1) DE2311646C3 (ja)
FR (1) FR2175574B1 (ja)
GB (1) GB1426760A (ja)
IT (1) IT980543B (ja)
NL (1) NL7303254A (ja)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2251104B1 (ja) * 1973-11-14 1978-08-18 Siemens Ag
US3990101A (en) * 1975-10-20 1976-11-02 Rca Corporation Solar cell device having two heterojunctions
JPS5837996B2 (ja) * 1976-03-31 1983-08-19 三菱電機株式会社 半導体発光装置
FR2387519A1 (fr) * 1977-04-15 1978-11-10 Thomson Csf Diode electroluminescente photodetectrice et lignes " bus " utilisant cette diode
DE3046140A1 (de) * 1980-12-06 1982-07-15 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt "signaluebertragungsverfahren, ein halbleiter-bauelement sowie ein elektro-optisches bauelement zur durchfuehrung des verfahrens"
JPS57163754U (ja) * 1981-04-06 1982-10-15
JPS57139976A (en) * 1981-02-23 1982-08-30 Omron Tateisi Electronics Co Light emitting/receiving device
DE3206069A1 (de) * 1981-02-23 1982-09-09 Omron Tateisi Electronics Co., Kyoto Lichtsende- und -empfangsvorrichtung
JPS57197881A (en) * 1981-05-29 1982-12-04 Omron Tateisi Electronics Co Light emitting and receiving element
JPS57118291A (en) * 1981-11-30 1982-07-23 Tokyo Shibaura Electric Co Monolithic display device
JPS6431134A (en) * 1987-07-27 1989-02-01 Nec Corp Driving method for pnpn optical thyristor
US5285078A (en) * 1992-01-24 1994-02-08 Nippon Steel Corporation Light emitting element with employment of porous silicon and optical device utilizing light emitting element
AU2175897A (en) 1997-04-08 1998-10-30 3Dv Systems Ltd. Solid state optical shutter
US6794628B2 (en) * 2000-01-03 2004-09-21 3Dv Systems, Ltd. Solid state optical shutter

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3466441A (en) * 1967-04-07 1969-09-09 Bell Telephone Labor Inc Semiconductor infrared-to-visible light image converter
US3526801A (en) * 1964-08-07 1970-09-01 Honeywell Inc Radiation sensitive semiconductor device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3535532A (en) * 1964-06-29 1970-10-20 Texas Instruments Inc Integrated circuit including light source,photodiode and associated components
US3537029A (en) * 1968-06-10 1970-10-27 Rca Corp Semiconductor laser producing light at two wavelengths simultaneously
JPS508315B1 (ja) * 1970-02-20 1975-04-03
US3748480A (en) * 1970-11-02 1973-07-24 Motorola Inc Monolithic coupling device including light emitter and light sensor
US3728593A (en) * 1971-10-06 1973-04-17 Motorola Inc Electro optical device comprising a unitary photoemitting junction and a photosensitive body portion having highly doped semiconductor electrodes
US3737741A (en) * 1971-11-22 1973-06-05 Bell Telephone Labor Inc Semiconductor devices utilizing geometrically controllable current filaments

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3526801A (en) * 1964-08-07 1970-09-01 Honeywell Inc Radiation sensitive semiconductor device
US3466441A (en) * 1967-04-07 1969-09-09 Bell Telephone Labor Inc Semiconductor infrared-to-visible light image converter

Also Published As

Publication number Publication date
FR2175574A1 (ja) 1973-10-26
US3852797A (en) 1974-12-03
IT980543B (it) 1974-10-10
JPS494488A (ja) 1974-01-16
NL7303254A (ja) 1973-09-18
GB1426760A (en) 1976-03-03
FR2175574B1 (ja) 1975-08-29
DE2311646C3 (de) 1981-02-26
DE2311646B2 (de) 1980-06-12
DE2311646A1 (de) 1973-09-27

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