JPS5594152A - Gas-sensitive element - Google Patents

Gas-sensitive element

Info

Publication number
JPS5594152A
JPS5594152A JP73479A JP73479A JPS5594152A JP S5594152 A JPS5594152 A JP S5594152A JP 73479 A JP73479 A JP 73479A JP 73479 A JP73479 A JP 73479A JP S5594152 A JPS5594152 A JP S5594152A
Authority
JP
Japan
Prior art keywords
gas
sensitive element
heater
semiconductor
approx
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP73479A
Other languages
Japanese (ja)
Inventor
Masaki Katsura
Hideo Okuma
Takashi Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP73479A priority Critical patent/JPS5594152A/en
Publication of JPS5594152A publication Critical patent/JPS5594152A/en
Pending legal-status Critical Current

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  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)

Abstract

PURPOSE: To provide a gas-sensitive element which has long life and preferable gas selectivity by providing a catalytic layer buried with a heater on the surface of the gas-sensitive element (metal oxide semiconductor).
CONSTITUTION: A binder is added to a metal oxide semiconductor (ZnO, Cr2O3, etc.). Electrodes 7, 7' are buried in the semiconductor, and the semiconductor is formed in cylindrical shape, and sintered at approx. 300W1,000°C to thus provide a gas-sensitive element 1. Then, the element 1 is inserted into a heater coil (such as, for example, platinum) 5, and thus fixed by a jig. Then, catalytic material (such as, for example, Pt, Rh, Pd, etc.) is carried in fine powder to thereby form a catalyst. This catalyst is coated on the outside of the element 1 to thereby bury the heater 5 so as to form a catalytic layer 6. Then, this sintered at approx. 300W 800°C to thereby obtain a gas-sensitive element.
COPYRIGHT: (C)1980,JPO&Japio
JP73479A 1979-01-10 1979-01-10 Gas-sensitive element Pending JPS5594152A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP73479A JPS5594152A (en) 1979-01-10 1979-01-10 Gas-sensitive element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP73479A JPS5594152A (en) 1979-01-10 1979-01-10 Gas-sensitive element

Publications (1)

Publication Number Publication Date
JPS5594152A true JPS5594152A (en) 1980-07-17

Family

ID=11481948

Family Applications (1)

Application Number Title Priority Date Filing Date
JP73479A Pending JPS5594152A (en) 1979-01-10 1979-01-10 Gas-sensitive element

Country Status (1)

Country Link
JP (1) JPS5594152A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5768664U (en) * 1980-10-13 1982-04-24
US4916935A (en) * 1983-11-09 1990-04-17 Bacharach, Inc. Low power solid state gas sensor with linear output and method of making the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5768664U (en) * 1980-10-13 1982-04-24
JPS6018133Y2 (en) * 1980-10-13 1985-06-01 株式会社伊藤喜工作所 display equipment
US4916935A (en) * 1983-11-09 1990-04-17 Bacharach, Inc. Low power solid state gas sensor with linear output and method of making the same

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