JPS5593264A - Manufacture of two-phase driving-type charge coupled device - Google Patents
Manufacture of two-phase driving-type charge coupled deviceInfo
- Publication number
- JPS5593264A JPS5593264A JP73779A JP73779A JPS5593264A JP S5593264 A JPS5593264 A JP S5593264A JP 73779 A JP73779 A JP 73779A JP 73779 A JP73779 A JP 73779A JP S5593264 A JPS5593264 A JP S5593264A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- films
- sio2
- film
- transfer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823406—Combination of charge coupled devices, i.e. CCD, or BBD
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP73779A JPS5593264A (en) | 1979-01-10 | 1979-01-10 | Manufacture of two-phase driving-type charge coupled device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP73779A JPS5593264A (en) | 1979-01-10 | 1979-01-10 | Manufacture of two-phase driving-type charge coupled device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5593264A true JPS5593264A (en) | 1980-07-15 |
Family
ID=11482028
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP73779A Pending JPS5593264A (en) | 1979-01-10 | 1979-01-10 | Manufacture of two-phase driving-type charge coupled device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5593264A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62126672A (ja) * | 1985-11-27 | 1987-06-08 | Mitsubishi Electric Corp | 電荷転送装置の製造方法 |
US5385860A (en) * | 1991-11-26 | 1995-01-31 | Sharp Kabushiki Kaisha | Charge transfer device |
-
1979
- 1979-01-10 JP JP73779A patent/JPS5593264A/ja active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62126672A (ja) * | 1985-11-27 | 1987-06-08 | Mitsubishi Electric Corp | 電荷転送装置の製造方法 |
US5385860A (en) * | 1991-11-26 | 1995-01-31 | Sharp Kabushiki Kaisha | Charge transfer device |
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