JPS5591830A - Method of visualizing defect on surface of polished silicon wafer - Google Patents
Method of visualizing defect on surface of polished silicon waferInfo
- Publication number
- JPS5591830A JPS5591830A JP15824479A JP15824479A JPS5591830A JP S5591830 A JPS5591830 A JP S5591830A JP 15824479 A JP15824479 A JP 15824479A JP 15824479 A JP15824479 A JP 15824479A JP S5591830 A JPS5591830 A JP S5591830A
- Authority
- JP
- Japan
- Prior art keywords
- silicon wafer
- polished silicon
- visualizing
- defect
- visualizing defect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8803—Visual inspection
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Weting (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/974,586 US4238275A (en) | 1978-12-29 | 1978-12-29 | Pyrocatechol-amine-water solution for the determination of defects |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5591830A true JPS5591830A (en) | 1980-07-11 |
JPS5757862B2 JPS5757862B2 (ja) | 1982-12-07 |
Family
ID=25522220
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15824479A Granted JPS5591830A (en) | 1978-12-29 | 1979-12-07 | Method of visualizing defect on surface of polished silicon wafer |
Country Status (6)
Country | Link |
---|---|
US (1) | US4238275A (ja) |
EP (1) | EP0012861B1 (ja) |
JP (1) | JPS5591830A (ja) |
CA (1) | CA1109372A (ja) |
DE (1) | DE2965006D1 (ja) |
IT (1) | IT1165405B (ja) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6139559U (ja) * | 1984-08-13 | 1986-03-12 | 正重 田渕 | 屋外据付け型の消火用ホ−ス格納庫 |
US7205265B2 (en) | 1990-11-05 | 2007-04-17 | Ekc Technology, Inc. | Cleaning compositions and methods of use thereof |
US20040018949A1 (en) * | 1990-11-05 | 2004-01-29 | Wai Mun Lee | Semiconductor process residue removal composition and process |
US6000411A (en) * | 1990-11-05 | 1999-12-14 | Ekc Technology, Inc. | Cleaning compositions for removing etching residue and method of using |
US6242400B1 (en) | 1990-11-05 | 2001-06-05 | Ekc Technology, Inc. | Method of stripping resists from substrates using hydroxylamine and alkanolamine |
US6110881A (en) * | 1990-11-05 | 2000-08-29 | Ekc Technology, Inc. | Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials |
US6121217A (en) | 1990-11-05 | 2000-09-19 | Ekc Technology, Inc. | Alkanolamine semiconductor process residue removal composition and process |
US5279771A (en) * | 1990-11-05 | 1994-01-18 | Ekc Technology, Inc. | Stripping compositions comprising hydroxylamine and alkanolamine |
US5391258A (en) * | 1993-05-26 | 1995-02-21 | Rodel, Inc. | Compositions and methods for polishing |
US7144849B2 (en) * | 1993-06-21 | 2006-12-05 | Ekc Technology, Inc. | Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials |
US5573680A (en) * | 1994-08-01 | 1996-11-12 | Memc Electronic Materials, Inc. | Method for etching a semiconductor material without altering flow pattern defect distribution |
US6403385B1 (en) * | 1998-01-27 | 2002-06-11 | Advanced Micro Devices, Inc. | Method of inspecting a semiconductor wafer for defects |
US6600557B1 (en) * | 1999-05-21 | 2003-07-29 | Memc Electronic Materials, Inc. | Method for the detection of processing-induced defects in a silicon wafer |
JP2002118083A (ja) * | 2000-10-05 | 2002-04-19 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
CN102735758A (zh) * | 2012-06-13 | 2012-10-17 | 鞍钢股份有限公司 | 一种无损检测换能器表面缺陷的修复方法 |
CN104900758B (zh) * | 2015-05-25 | 2017-03-15 | 连云港市产品质量监督检验中心 | 一种准单晶硅片微缺陷的检测方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1288278A (ja) * | 1968-12-31 | 1972-09-06 | ||
GB1211499A (en) * | 1969-03-07 | 1970-11-04 | Standard Telephones Cables Ltd | A method of manufacturing semiconductor devices |
US3728179A (en) * | 1970-05-20 | 1973-04-17 | Radiation Inc | Method of etching silicon crystals |
US3718514A (en) * | 1971-05-28 | 1973-02-27 | Bell Telephone Labor Inc | Removal of projections on epitaxial layers |
US3834959A (en) * | 1972-06-30 | 1974-09-10 | Ibm | Process for the formation of selfaligned silicon and aluminum gates |
-
1978
- 1978-12-29 US US05/974,586 patent/US4238275A/en not_active Expired - Lifetime
-
1979
- 1979-10-31 CA CA338,885A patent/CA1109372A/en not_active Expired
- 1979-11-27 DE DE7979104722T patent/DE2965006D1/de not_active Expired
- 1979-11-27 EP EP79104722A patent/EP0012861B1/de not_active Expired
- 1979-12-07 JP JP15824479A patent/JPS5591830A/ja active Granted
- 1979-12-20 IT IT28246/79A patent/IT1165405B/it active
Also Published As
Publication number | Publication date |
---|---|
IT1165405B (it) | 1987-04-22 |
EP0012861A1 (de) | 1980-07-09 |
IT7928246A0 (it) | 1979-12-20 |
CA1109372A (en) | 1981-09-22 |
DE2965006D1 (en) | 1983-04-14 |
EP0012861B1 (de) | 1983-03-09 |
JPS5757862B2 (ja) | 1982-12-07 |
US4238275A (en) | 1980-12-09 |
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